We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements have shown that mobilities significantly higher than 200,000 cm2/Vs are achievable, if extrinsic disorder is eliminated. A sharp (threshold-like) increase in resistivity observed above approximately 200K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intra-ripple flexural phonons.
@article{arxiv.0710.5304,
title = {Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer},
author = {S. V. Morozov and K. S. Novoselov and M. I. Katsnelson and F. Schedin and D. C. Elias and J. A. Jaszczak and A. K. Geim},
journal= {arXiv preprint arXiv:0710.5304},
year = {2008}
}