We theoretically study the inelastic scattering rate and the carrier mean free path for energetic hot electrons in graphene, including both electron-electron and electron-phonon interactions. Taking account of optical phonon emission and electron-electron scattering, we find that the inelastic scattering time τ∼10−2−10−1ps and the mean free path l∼10−102nm for electron densities n=1012−1013cm−2. In particular, we find that the mean free path exhibits a finite jump at the phonon energy 200meV due to electron-phonon interaction. Our results are directly applicable to device structures where ballistic transport is relevant with inelastic scattering dominating over elastic scattering.
@article{arxiv.0806.0436,
title = {Ballistic Hot Electron Transport in Graphene},
author = {Wang-Kong Tse and E. H. Hwang and S. Das Sarma},
journal= {arXiv preprint arXiv:0806.0436},
year = {2009}
}