The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature T≳10K, and the resistivity increases quadratically with T. Flexural phonons limit the intrinsic mobility down to a few m2/Vs at room T. Their effect can be eliminated by applying strain or placing graphene on a substrate.
@article{arxiv.1008.2522,
title = {Limits on electron quality in suspended graphene due to flexural phonons},
author = {E. V. Castro and H. Ochoa and M. I. Katsnelson and R. V. Gorbachev and D. C. Elias and K. S. Novoselov and A. K. Geim and F. Guinea},
journal= {arXiv preprint arXiv:1008.2522},
year = {2011}
}