We report a systematic study of the contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on 11 graphene flakes we demonstrate that the contact resistance is quantitatively the same for single-, bi-, and tri-layer graphene (∼800±200Ωμm), and is in all cases independent of gate voltage and temperature. We argue that the observed behavior is due to charge transfer from the metal, causing the Fermi level in the graphene region under the contacts to shift far away from the charge neutrality point.
@article{arxiv.0901.0485,
title = {Contact resistance in graphene-based devices},
author = {S. Russo and M. F. Craciun and M. Yamamoto and A. F. Morpurgo and S. Tarucha},
journal= {arXiv preprint arXiv:0901.0485},
year = {2015}
}