Comprehensive Modeling of Graphene Resistivity
Abstract
Since the first graphene layer was fabricated in the early 2000's, graphene properties have been studied extensively both experimentally and theoretically. However, when comparing the many resistivity models reported in literature, several discrepancies can be found, as well as a number of inconsistencies between formulas. In this paper, we revise the main scattering mechanisms in graphene, based on theory and goodness of fit to in-house experimental data. In particular, a step-by-step evaluation of the interaction between electrons and optical phonons is carried out, where we demonstrate that the process of optical phonon emission scattering is completely suppressed for all low-field applications and all temperatures in the range of interest, as opposed to what is often reported in literature. Finally, we identify the best scattering models based on the goodness of fit to experimental data.
Cite
@article{arxiv.1712.00341,
title = {Comprehensive Modeling of Graphene Resistivity},
author = {Antonino Contino and Ivan Ciofi and Xiangyu Wu and Inge Asselberghs and Christopher J. Wilson and Zsolt Tokei and Guido Groeseneken and Bart Soree},
journal= {arXiv preprint arXiv:1712.00341},
year = {2017}
}
Comments
7 pages, 5 figures, to be submitted to Journal of Applied Physics