相关论文: Cryogenic GaAs high-electron-mobility-transistor a…
A technically simple and physically clear method is suggested for the direct measurement of brightness temperature of two-dimensional electron gas (2DEG) in the channel of a high electron mobility transistor (HEMT). The usage of the method…
High Electron Mobility Transistors (HEMTs) are most suitable for harsh environments as they operate reliably under extreme conditions such as high voltages, high temperatures, radiation exposure and corrosive atmospheres. In this article,…
We report on low-temperature noise measurements of a single electron transistor (SET) immersed in superfluid $^4$He. The device acts as a charge sensitive electrometer able to detect the fluctuations of charged defects in close proximity to…
We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in…
A tabletop low-noise differential amplifer with a bandwidth of 100 kHz is presented. Low voltage drifts of the order of 100 nV/day are reached by thermally stabilizing relevant amplifer components. The input leakage current is below 100 fA.…
We present a cryogenic microwave noise source with a characteristic impedance of 50 $\Omega$, which can be installed in a coaxial line of a cryostat. The bath temperature of the noise source is continuously variable between 0.1 K and 5 K…
We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance…
The RICOCHET reactor neutrino observatory is planned to be installed at the Laue Langevin Institute (ILL) starting mid-2022. Its scientific goal is to perform a low-energy and high precision measurement of the coherent elastic…
To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used. This paper investigates the…
The requirements and details of designing a measuring cell and low-back-action deeply-cooled amplifier for quantum measurements at 10 mK are discussed. This equipment is a part of a microwave single-photon counter based on a superconducting…
We present the measured baseline ionization resolution of a HEMT-based cryogenic charge amplifier coupled to a CDMS-II detector. The amplifier has been developed to allow massive semiconductor dark matter detectors to retain background…
In this paper a new design of MMIC based LNA is outlined. This design uses a discrete 100-nm InP HEMT placed in front of an existing InP MMIC LNA to lower the overall noise temperature of the LNA. This new approach known as the Transistor…
This paper presents an analytical model to quantify the measured noise in a cryogenic bolometer readout circuit. The model includes the contributions from the bias resistors and sensor resistors, voltage and current noise of amplifier, and…
We have developed a highly-sensitive integrated capacitance bridge for quantum capacitance measurements. Our bridge, based on a GaAs HEMT amplifier, delivers attofarad (aF) resolution using a small AC excitation at or below kT over a broad…
Low-noise cryogenic microwave amplifiers are widely used in applications such as radio astronomy and quantum computing. On-wafer noise characterization of cryogenic low-noise transistors is desirable because it facilitates more rapid…
We describe the construction and operation of a two-channel noise detection system for measuring power and cross spectral densities of current fluctuations near 2 MHz in electronic devices at low temperatures. The system employs cryogenic…
We developed a high-speed and low-noise time-domain current measurement scheme using a homemade GaAs high-electron-mobility-transistor-based cryogenic transimpedance amplifier (TIA). The scheme is versatile for broad cryogenic current…
Low capacitance, large volume, high purity germanium (HPGe) radiation detectors have been successfully employed in low-background physics experiments. However, some physical processes may not be detectable with existing detectors whose…
We present a comprehensive investigation of self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) through technology computer-aided design (TCAD) simulations and phonon Monte Carlo (MC) simulations. With…
In this paper, physics-based analytical models using two-dimensional (2D) Poisson equations for surface potential, channel potential, electric field, and drain current in AlN/$\beta$-Ga$_2$O$_3$ high electron mobility transistor (HEMT) is…