相关论文: Cryogenic GaAs high-electron-mobility-transistor a…

Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an outstanding…

We implemented a low noise current preamplifier for the readout of resistive bolometers. We tested the apparatus on thermometer resistances ranging from 10 Ohm to 500 Mohm. The use of current preamplifier overcomes constraints introduced by…

The design and performance of a low-noise, modular cryogenic probe, applicable to a wide range of measurements over a broad range of working frequencies, temperatures, and magnetic fields is presented. The design of the probe facilitates…

A new cryogenic noise calibration source for radio astronomy receivers is presented. Dissipated power is only 4.2 mW, allowing it to be integrated with the cold part of the receiver. Measured long-term stability, sensitivity to bias…

Thermoacoustic Refrigerators use acoustic power for generating cold temperatures. Development of refrigerators based on the thermoacoustic technology is a novel solution to the present day need of cooling, without causing environmental…

Accurate in situ calibration of microwave attenuation and amplification-chain noise is essential for superconducting quantum circuits. We demonstrate a compact, self-calibrating cryogenic noise source based on an on-chip chromium attenuator…

A shift of paradigm to obtain (sub-)Kelvin environment is currently on-going with the democratization of cryogen-free cryocoolers, boosted by their easy-to-use and continuous operation without the need of liquid helium whose cost and…

A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG)…

We describe the design and performance of a series of fast, precise current sensing noise thermometers. The thermometers have been fabricated with a range of resistances from 1.290 $\Omega$ down to 0.2 m$\mathrm{\Omega}$. This results in…

In modern high precision optical instruments, such as in gravitational wave detectors or frequency references, thermally induced fluctuations in the reflective coatings can be a limiting noise source. This noise, known as coating thermal…

Indium phosphide (InP) high electron-mobility transistors (HEMTs) are widely used in many fields such as quantum computing because of their unparalleled microwave noise performance. Achieving improved noise performance requires a physical…

We demonstrate simultaneous measurements of DC transport properties and flux noise of a hybrid superconducting magnetometer based on the proximity effect (superconducting quantum interference proximity transistor, SQUIPT). The noise is…

We present measurements of the electron temperature using gate defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a…

Conventional scanning tunneling microscopy (STM) is limited to a bandwidth of circa 1kHz around DC. Here, we develop, build and test a novel amplifier circuit capable of measuring the tunneling current in the MHz regime while simultaneously…

An analysis of recent experimental data for high-performance In0.7Ga0.3As high electron mobility transistors (HEMTs) is presented. Using a fully quantum mechanical, ballistic model, we simulate In0.7Ga0.3As HEMTs with gate lengths of LG =…

We have developed preamplifier configurations used to readout resistive bolometers such as those based on Neutron Transmuted Doped Germanium thermometers (so called NTD Ge thermometers)[1] or NbSi thin film thermometers [2, 3]. We introduce…

Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for quantum information processing. We use selective area growth…

The thermal stability and structural evolution of a GaN high-electron-mobility transistor (HEMT) heterostructure grown on a Si (111) substrate were investigated using in situ high-temperature X-ray diffraction (HT-XRD), reciprocal space…

We demonstrate a radio-frequency parametric amplifier that exploits the gate-tunable quantum capacitance of an ultra high mobility two dimensional electron gas (2DEG) in a GaAs heterostructure at cryogenic temperatures. The prototype…

Gallium Oxide (Ga2O3) has a huge potential on the power device for its high breakdown filed and good transport properties. beta-Ga2O3 as the thermodynamics stable phase, has been demonstrated to form high electron mobility transistor (HEMT)…