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Transition metal dichalcogenides and related layered materials in their monolayer and a few layers thicknesses regime provide a promising optoelectronic platform for exploring the excitonic- and many-body physics. Strain engineering has…

介观与纳米尺度物理 · 物理学 2025-05-07 Yunus Waheed , Sumitra Shit , Jithin T Surendran , Indrajeet D Prasad , Kenji Watanabe , Takashi Taniguchi , Santosh Kumar

Tuning the electronic properties of a material by subjecting it to strain constitutes an important strategy to enhance the performance of semiconducting electronic devices. Using local strain, confinement potentials for excitons can be…

Exciton mobility in two-dimensional semiconductors is a key ingredient in materials-based design of optoelectronic functionalities. Monolayer transition metal dichalcogenides (TMDs) set a good test case, with tightly bound excitons and…

材料科学 · 物理学 2026-02-17 Amir Kleiner , Sivan Refaely-Abramson

Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors emerging promising applications in diverse optoelectronic devices. To improve performance, recent investigations have been systematically focused on the tuning…

Methods for nanoscale material characterization are in ever-increasing demand, especially those that can provide a broader range of information at once. Near-field techniques based on combinations of scanning probe microscopy (SPM) and…

应用物理 · 物理学 2020-11-11 Alvaro Rodriguez , Tim Verhagen , Martin Kalbac , Jana Vejpravova , Otakar Frank

We report nanoscale bandgap engineering via a local strain across the inhomogeneous ferroelectric interface, which is controlled by the visible-light-excited probe voltage. Switchable photovolatic effects and the spectral response of the…

The ability to fine-tune band gap and band inversion in topological materials is highly desirable for the development of novel functional devices. Here we propose that the electronic properties of a free-standing nanomembrane of topological…

材料科学 · 物理学 2015-06-08 Xiaofeng Qian , Liang Fu , Ju Li

One of the fascinating properties of the new families of two-dimensional crystals is their high stretchability and the possibility to use external strain to manipulate, in a controlled manner, their optical and electronic properties. Strain…

介观与纳米尺度物理 · 物理学 2015-07-24 Rafael Roldán , Andres Castellanos-Gomez , Emmanuele Cappelluti , Francisco Guinea

Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness.…

介观与纳米尺度物理 · 物理学 2016-08-17 N. -C. Yeh , C. -C. Hsu , M. L. Teague , J. -Q. Wang , D. A. Boyd , C. -C. Chen

Mechanical deformations, either spontaneously occurring during sample preparation or purposely induced in their nanoscale manipulation, drastically affect the electronic and optical properties of transition metal dichalcogenide monolayers.…

材料科学 · 物理学 2024-02-16 Stefan Velja , Jannis Krumland , Caterina Cocchi

As device miniaturization approaches the atomic limit, it becomes highly desirable to exploit novel paradigms for tailoring electronic structures and carrier dynamics in materials. Elastic strain can in principle be applied to achieve…

材料科学 · 物理学 2013-07-10 Xuewen Fu , Cong Su , Qiang Fu , Xinli Zhu , Rui Zhu , Chuanpu Liu , Jun Xu , Ji Feng , Ju Li , Dapeng Yu

Nanoscale tailoring of the optoelectronic response of 2D Transition Metal Dichalcogenides semiconductor layers (TMDs) has been achieved thanks to a novel strain engineering approach based on the grayscale thermal-Scanning Probe Lithography…

介观与纳米尺度物理 · 物理学 2026-01-21 G. Zambito , G. Ferrando , M. Barelli , M. Ceccardi , F. Caglieris , D. Marre , F. Bisio , F. B. de Mongeot , M. C. Giordano

Mechanical strain is a powerful tuning knob for excitons, Coulomb-bound electron-hole complexes dominating optical properties of two-dimensional semiconductors. While the strain response of bright free excitons is broadly understood, the…

Two dimensional (2D) van der Waals (vdW) magnetic semiconductors are a new class of quantum materials for studying the emergent physics of excitons and spins in the 2D limit. Twist engineering provides a powerful tool to manipulate the…

Recent experimental studies of out-of-plane straining geometries of transition metal dichalchogenide (TMD) monolayers have demonstrated sufficient band gap renormalisation for device application such as single photon emitters. Here, a…

介观与纳米尺度物理 · 物理学 2018-06-06 Matthew Brooks , Guido Burkard

Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile…

Recent advances in emerging atomically thin transition metal dichalcogenide semiconductors with strong light-matter interactions and tunable optical properties provide novel approaches for realizing new material functionalities. Coupling…

In this work, the strain modulation of electronic structure and magnetic interaction in monolayer nanoribbons of B$_2$S, a recently realized monolayer system, is investigated. In the first part of our study, we focus on how the electronic…

介观与纳米尺度物理 · 物理学 2019-09-10 Moslem Zare

Strain engineering allows the physical properties of materials and devices to be widely tailored, as paradigmatically demonstrated by strained transistors and semiconductor lasers employed in consumer electronics. For this reason, its…

Semiconducting 2D materials, such as transition metal dichalcogenides (TMDs), are emerging in nanomechanics, optoelectronics, and thermal transport. In each of these fields, perfect control over 2D material properties including strain,…