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Strain engineering has quickly emerged as a viable option to modify the electronic, optical and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that by creating…

Local strain engineering is a promising technique to tune the properties of two-dimensional materials at the nanoscale. However, many existing methods are static and limit the systematic exploration of strain-dependent material behavior.…

材料科学 · 物理学 2025-07-11 Eric Herrmann , Zhixiang Huang , Sai Rahul Sitaram , Ke Ma , S M Jahadun Nobi , Xi Wang

The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to…

The appearance of single photon sources in atomically thin semiconductors holds great promises for the development of a flexible and ultra-compact quantum technology, in which elastic strain engineering can be used to tailor their emission…

The bandgap of MoS2 is highly strain-tunable which results in the modulation of its electrical conductivity and manifests itself as the piezoresistive effect while a piezoelectric effect was also observed in odd-layered MoS2 with broken…

介观与纳米尺度物理 · 物理学 2015-07-22 Sajedeh Manzeli , Adrien Allain , Amirhossein Ghadimi , Andras Kis

Two-dimensional (2D) layered materials provide an ideal platform for engineering electronic and optical properties through strain control because of their extremely high mechanical elasticity and sensitive dependence of material properties…

材料科学 · 物理学 2022-09-27 Yueyang Yu , Chuan-Ding Dong , Rolf Binder , Stefan Schumacher , Cun-Zheng Ning

InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We,…

Few-layer GaSe is one of the latest additions to the family of 2D semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile…

介观与纳米尺度物理 · 物理学 2019-03-07 David Maeso , Sahar Pakdel , Hernan Santos , Nicolas Agrait , Juan Jose Palacios , Elsa Prada , Gabino Rubio-Bollinger

To realize braiding of vortex lines and understand the basic properties of the energy landscape for vortex motion, precise manipulation of superconducting vortices on the nanoscale is required. Here, we reveal that a localized trapping…

There has been a massive growth in the study of transition metal dichalcogenides (TMDs) over the past decade, based upon their interesting and unusual electronic, optical and mechanical properties, such as tuneable and strain-dependent…

应用物理 · 物理学 2020-11-02 Fang Wang , Suhao Li , Mark A. Bissett , Ian A. Kinloch , Zheling Li , Robert J. Young

Monolayers of transition metal dichalcogenides (TMDs) have recently emerged as a promising optoelectronic platform. To leverage their full potential, however, it is important to understand and engineer the properties of the different…

Atomically sharp 2D in-plane heterostructures with nanoscale interfaces provide a powerful platform for tailoring optical and electrical properties at the nanoscale, enabling novel device engineering and the exploration of new physical…

In atomically thin semiconductors, localized exciton (X$_L$) coupled to light shows single quantum emitting behaviors through radiative relaxation processes providing a new class of optical sources for potential applications in quantum…

Excitons in 2D material bubbles-nanoscale deformations in atomically thin materials, typically exhibiting a dome-like shape-are confined by the strain effect, exhibiting extraordinary emission properties, such as single photon generation,…

Twist-engineering of the electronic structure of van-der-Waals layered materials relies predominantly on band hybridization between layers. Band-edge states in transition-metal-dichalcogenide semiconductors are localized around the metal…

Applying elastic deformation can tune a material physical properties locally and reversibly. Spatially modulated lattice deformation can create a bandgap gradient, favouring photo-generated charge separation and collection in optoelectronic…

Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes…

In monolayer transition metal dichalcogenides, quantum emitters are associated with localized strain that can be deterministically applied to create designer nano-arrays of single photon sources. Despite an overwhelming empirical…

Two-dimensional (2D) materials and heterostructures have recently gained wide attention due to potential applications in optoelectronic devices. However, the optical properties of the heterojunction have not been properly characterized due…

应用物理 · 物理学 2020-01-29 Zachary H Withers , Sharad Ambardar , Xiaoyi Lai , Jiru Liu , Alina Zhukova , Dmitri V Voronine

This paper investigates strain effects on the electronic and optical properties of monolayer GaSe using first-principles calculations. The deformation significantly alters energy dispersion, band gap, and the band edge states of GaSe. The…

材料科学 · 物理学 2023-01-03 Vo Khuong Dien , Nguyen Thi Han , Wei-Bang Li , Kuang-I Lin , Ming-Fa Lin