相关论文: Degenerate doping in \b{eta}-Ga2O3 Single Crystals…

Diamond is an outstanding semiconductor for extreme electronics, yet reproducible n-type doping remains a long-standing challenge. Here we demonstrate stable n-type single-crystal diamond grown in a single step by a precisely controlled…

Electron irradiation is investigated as a way to dope the topological insulator Bi2Te3. For this, p-type Bi2Te3 single crystals have been irradiated with 2.5 MeV electrons at room temperature and electrical measurements have been performed…

We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure. Alloy composition is confirmed using HRXRD measurements.…

We report on the design and demonstration of ${\beta}-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer layer between the Si delta-doping and heterojunction…

We report on the growth and characterization of Ge-doped \b{eta}-Ga2O3 thin films using a solid germanium source. \b{eta}-Ga2O3 thin films were grown using a low-pressure chemical vapor deposition (LPCVD) reactor with either an oxygen or…

Polarization induced degenerate $n$-type doping with electron concentrations up to $\sim$10$^{20}$\,cm$^{-3}$ is achieved in graded Al$_{x}$Ga$_{1-x}$N layers ($x$: 0\%$\rightarrow$37\%) grown on unintentionally doped and on $n$-doped…

Resistivity, Hall effect and magnetoresistance have been investigated systematically on single crystals of Ba$_{1-x}$K$_x$Fe$_2$As$_2$ ranging from undoped to optimally doped regions. A systematic evolution of the quasiparticle scattering…

We report the growth of electrically-resistive vanadium-doped beta-Ga2O3 single crystals via the optical floating zone technique. By carefully controlling the growth parameters V-doped crystals with very high electrical resistivity compared…

Detailed doping dependence of the electronic specific heat coefficient gamma is studied for La2-xSrxCuO4 (LSCO) single crystals in the slightly-doped regime. We find that gamma systematically increases with doping, and furthermore, even for…

We use hybrid density functional calculations to assess n-type doping in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys. We focus on Si, the most promising donor dopant, and study the structural properties, formation energies and…

Undoped and Cr doped \b{eta}-Ga2O3 (100) single crystals are grown by optical floating zone method. The full width at half maximum of rocking curve is found to be 106 arcsec for undoped Ga2O3 crystals whereas the 100 and 200 ppm of Cr doped…

We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn doping densities were characterised by magnetotransport experiments at…

Here, we report the growth and characterization of single crystals of NdxSb2-xTe3, by solid state reaction route via self-flux method. The phase and layered growth are confirmed through x-ray diffraction and Scanning electron microscopy…

Investigation of Seebeck coefficient in ultra-wide bandgap materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction.…

We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in $\beta$-Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples grown by a variety of methods, including edge-defined…

We have systematically grown large single crystals of layered compound beta-PdBi2, both the hole-doped PdBi2-xPbx and the electron-doped NaxPdBi2, and studied their magnetic and transport properties. Hall-effect measurement on PdBi2,…

A series of 122 phase BaFe$_{2-x}$Ni$_x$As$_2$ ($x$ = 0, 0.055, 0.096, 0.18, 0.23) single crystals were grown by self flux method and a dome-like Ni doping dependence of superconducting transition temperature is discovered. The transition…

We report the doping high concentration of tetravalent Ge4+ ions (5 mol % for x = 0.05 to 30 mol % for x = 0.30) at the Fe3+ sites of Fe2-xGexO3 system by chemical coprecipitation route. The charge state of Fe and Ge ions has been modified…

We report an original procedure for the elaboration of very high quality single crystals of superconducting HgBa2Ca2Cu3O8+{\delta} mercury cuprates. These single crystals are unique with very high quality surface paving the way for…

The upper critical field ($H_{c2}$) in superconducting BaFe$_{2-x}$Ni$_{x}$As$_2$ single crystals has been determined by magnetotransport measurements down to 0.6 K over the whole superconducting dome with $0.065 \leqslant x \leqslant…