相关论文: First-Principles Theory for Schottky Barrier Physi…
In a continuum model of the solvation of charged molecules in an aqueous solvent, the classical Poisson-Boltzmann (PB) theory is generalized to include the solute point charges and the dielectric boundary that separates the high-dielectric…
We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode…
The potential barrier height at the interface formed by a metal contact and multiple one-dimensional (1D) quasi-ballistic channels in field-effect transistors (FETs) is evaluated across different carbon nanotube and nanowire device…
We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport…
Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical…
In quantum information processing, one often considers inserting a barrier into a box containing a particle to generate one bit of Shannon entropy. We formulate this problem as a one-dimensional Schr\"{o}dinger equation with a…
A stochastic approach for charge transport in diodes is developed in consistency with the laws of electricity, thermodynamics, and microreversibility. In this approach, the electron and hole densities are ruled by diffusion-reaction…
Self-consistent field theory (SCFT) is one of the useful methods to simulate phase separated structures of multi-component polymer systems. In this article, we propose an SCFT for semiflexible polymer melts, where the basic equations for…
In this work we study the Schottky barrier height (SBH) at the junction between $\beta$-Ga$_2$O$_3$ and platinum, a system of great importance for the next generation of high-power and high-temperature electronic devices. Specifically, we…
The problem of Fermi-level pinning at semiconductor-metal contacts is readdressed starting from first-principles calculations for Al/GaAs. We give quantitative evidence that the Schottky barrier height is very little affected by any…
The `Schottky Conjecture' deals with the electrostatic field enhancement at the tip of compound structures such as a hemiellipsoid on top of a hemisphere. For such a 2-primitive compound structure, the apex field enhancement factor…
The newly emerging class of atomically-thin materials has shown a high potential for the realisation of novel electronic and optoelectronic components. Amongst this family, semiconducting transition metal dichalcogenides (TMDCs) are of…
Recently demonstrated metal-semiconductor heterojunctions with few-atom thickness show their promise as 2D Schottky contacts for future integrated circuits and nanoelectronics. The theory for 3D Schottky contacts, however, fails on these…
A new method ( PI-DFT ) which combines path integrals and density functional theory is proposed as a pathway to many fields of physics. Within path integral theory it is possible to construct particle densities without explicitly…
Metal-semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the junction by pinning the metal Fermi energy. We report…
An attempt to determine theoretically the highly non-linear current-voltage (I-V) characteristics of polycrystalline semiconductors, such as ZnO-based varistors, is made from the electrical properties of individual grain boundaries under dc…
A general, system-independent formulation of the parabolic Schr\"odinger-Poisson equation is presented for a charged hard wall in the limit of complete screening by the ground state. It is solved numerically using iteration and…
The Poisson Nernst-Planck equations for charge concentration and electric potential in a ball is a model of electro-diffusion of ions in the head of a neuronal dendritic spine. We study the relaxation and the steady state when an initial…
We report on the low-frequency electronic noise in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the…
Black phosphorous (BP) is is recently unveiled as a promising two-dimensional direct bandgap semiconducting material. Here, we report the ambipolar field effect transistor behavior of multilayers of BP with ferromagnetic tunnel contacts. We…