相关论文: Probing strain modulation in a gate-defined one di…
We have developed a microspectroscopy technique for measuring gate-modulated reflectance to probe excitonic states in two-dimensional transition metal dichalcogenides. Successfully observing excited states of excitons from cryogenic to room…
With the advances in low dimensional transition metal dichalcolgenides (TMDCs) based metal oxide semiconductor field effect transistor (MOSFET), the interface between semiconductors and dielectrics has received considerable attention due to…
We propose a spintronic strain sensor capable of sensing strain with a sensitivity of 1E-13/sqrt{Hz} at room temperature with an active sensing area of 1 cmE2 and power dissipation of 1 watt. This device measures strain by monitoring the…
Ballistic spin polarized transport through diluted magnetic semiconductor (DMS) single and double barrier structures is investigated theoretically using a two-component model. The tunneling magnetoresistance (TMR) of the system exhibits…
We study the three-dimensional deformation field induced by an axial (In,Ga)N segment in a GaN nanowire. Using the finite element method within the framework of linear elasticity theory, we study the dependence of the strain field on the…
Uniaxial strain experiments have become a powerful tool to unveil the character of unconventional phases of electronic matter. Here we propose a combination of the superconducting fitness analysis and density functional theory (DFT)…
Optically detected magnetic resonance (ODMR) is an efficient mechanism to readout the spin of solid-state color centers at room temperature, thus enabling spin-based quantum sensors of magnetic field, electric field, and temperature with…
We use spin-torque resonance to probe simultaneously and separately the dynamics of a magnetic domain wall and of magnetic domains in a nanostripe magnetic tunnel junction. Thanks to the large associated resistance variations we are able to…
Mechanical strain is a powerful technique for tuning electronic structure and interactions in quantum materials. In a system with tetragonal symmetry, a tunable uniaxial in-plane strain can be used to probe nematic correlations in the same…
Much new solid state technology for single-photon sources, detectors, photovoltaics and quantum computation relies on the fabrication of strained semiconductor nanostructures. Successful development of these devices depends strongly on…
We investigate the mesoscopic disorder induced rms conductance variance $\delta G$ in a few layer graphene nanoribbon (FGNR) contacted by two superconducting (S) Ti/Al contacts. By sweeping the back-gate voltage, we observe pronounced…
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using…
We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2…
We have investigated the transport properties of one-dimensional (1D) constrictions defined by split-gates in high quality GaAs/AlGaAs heterostructures. In addition to the usual quantized conductance plateaus, the equilibrium conductance…
The current through a carbon nanotube field-effect transistor (CNFET) with cylindrical gate electrode is calculated using the nonequilibrium Greens function method in a tight-binding approximation. The obtained result is in good agreement…
High frequency operation of tunneling real-space transfer transistor (TRSTT) in the negative differential resistance (NDR) regime is assessed by calculating the device common source unity current gain frequency (fT) range with a small…
The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or…
The domain wall induced reversal dynamics in compressively strained GaMnAs was studied employing the magneto-optical Kerr effect and Kerr microscopy. Due to the influence of an uniaxial part in the in-plane magnetic anisotropy (90+/-Delta)…
We demonstrate a local strain sensing method for nanostructures based on metallic Al tunnel junctions with AlOx barriers. The junctions were fabricated on top of a thin silicon nitride membrane, which was actuated with an AFM tip attached…
Intrinsic domain-wall resistance (DWR) in (Ga,Mn)As is studied theoretically and compared to experimental results. The recently developed model of spin transport in diluted ferromagnetic semiconductors [Van Dorpe et al., Phys. Rev. B 72,…