相关论文: Probing strain modulation in a gate-defined one di…
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced potential fluctuations that can potentially impair device…
We study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electron and nuclear spins is modulated by tuning a position of the…
Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the…
We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with diameter around 20nm is obtained over T=40 to…
The production of new sensors, transducers and electronic components can benefit from the possibility to alter the electronic transport of metal-semicondutor-metal (MSM) devices. 2D materials are extremely appealing for those new…
A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer,…
Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing…
We survey some recent accumulated body of works on hyperfine-mediated transport in a confined one-dimensional channel, realized typically by electrostatic gating. Our review begins with how the spin-polarized edge current can be used as a…
Elastic strain changes the energies of the conduction band in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that the typical strains in a semiconductor nanostructure from metal gates are large…
We measure the frequency dependent capacitance of a gate covering the edge and part of a two-dimensional electron gas in the quantum Hall regime. In applying a positive gate bias, we create a metallic puddle under the gate surrounded by an…
Moir\'e fringes are used throughout a wide variety of applications in physics and engineering to bring out small variations in an underlying lattice by comparing with another reference lattice. This method was recently demonstrated in…
We used density-functional theory based first principles simulations to study the effects of uniaxial strain and quantum confinement on the electronic properties of germanium nanowires along the [110] direction, such as the energy gap and…
Moderate amount of bending strains, ~3% are enough to induce the semiconductor-metal transition in Si nanowires of ~4nm diameter. The influence of bending on silicon nanowires of 1 nm to 4.3 nm diameter is investigated using molecular…
A study of the resistively detected nuclear magnetic resonance (RDNMR) lineshape in the vicinity of $\nu=1$ was performed on a high-mobility 2D electron gas formed in GaAs/AlGaAs. In higher Landau levels, application of an RF field at the…
Two-dimensional (2D) semiconductors have emerged as leading candidates for the development of low-power and multifunctional computing applications, thanks to their qualities such as layer-dependent band gap tunability, high carrier…
We report the detection of a gate-tunable kinetic inductance in a hybrid InAs/Al nanowire. For this purpose, we have embedded the nanowire into a quarter-wave coplanar waveguide resonator and measured the resonance frequency of the circuit.…
Confinement of electrons in graphene to make devices has proven to be a challenging task. Electrostatic methods fail because of Klein tunneling, while etching into nanoribbons requires extreme control of edge terminations, and bottom-up…
In two-dimensional nearly commensurate heterostructures, strain plays a critical role in shaping electronic behavior. While previous studies have focused on random strain introduced during fabrication, achieving controlled structural design…
Rewritable nanoelectronics offers new perspectives and potential to both fundamental research and technological applications. Such interest has driven the research focus into conducting domain walls: pseudo 2D conducting channels that can…
We probe electro-mechanical properties of InAs nanowire (diameter ~ 100 nm) resonators where the suspended nanowire (NW) is also the active channel of a field effect transistor (FET). We observe and explain the non-monotonic dispersion of…