相关论文: Probing strain modulation in a gate-defined one di…

Negative differential resistance (NDR) with room temperature peak-valley-ratio of 8 has been observed in a ballistic field-effect-transistor (FET) based on graphene, having an oblique top gate. Graphene FETs with a top gate inclination…

According to Onsager's principle, electrical resistance $R$ of general conductors behaves as an even function of external magnetic field $B$. Only in special circumstances, which involve time reversal symmetry (TRS) broken by…

We demonstrate an interface-sensitive NMR in a semiconducting nanostructure, where an NMR signal from the minute heterojunction region of a model heterojunction structure (In$_{0.48}$Ga$_{0.52}$P/GaAs) is detected by using nuclear…

Mechanical strain is a powerful tool to tune the optical and optoelectronic properties of atomically thin semiconductors. Inhomogeneous strain plays an important role in exciton funneling and the activation of single-photon emitters in 2D…

The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE.…

Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devices. Today it is still a challenge to measure strain in…

Electron spins in edge or surface modes of topological insulators (TIs) with strong spin-orbit coupling cannot be directly manipulated with microwaves due to the locking of electron spin to its momentum. We show by contrast that a…

We demonstrate a tunable negative differential resistance controlled by spin blockade in single electron transistors. The single electron transistors containing a few electrons and spin polarized source and drain contacts were formed in…

The amplitude V_0 of unidirectional periodic potential modulation introduced by a surface grating into a two-dimensional electron gas (2DEG) formed at AlGaAs/GaAs heterointerface is measured as a function of electron density n_e by…

Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of…

Two dimensional SrTiO3-based interfaces stand out among non-centrosymmetric superconductors due to their intricate interplay of gate tunable Rashba spin-orbit coupling and multi-orbital electronic occupations, whose combination…

A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum…

Strain engineering in semiconductor nanostructures offers a promising route to optimize electronic and optical properties for advanced quantum technologies. This study explores the relationship between core and shell thicknesses and strain…

Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod…

Several experiments have recently reported on gate-tunable superconducting properties in metallic devices, holding promise for the realization of cryogenic switches, tunable resonators, and superconducting logic. In particular, the…

The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between…

Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We…

We propose energy efficient strain control of domain wall (DW) in a perpendicularly magnetized nanoscale racetrack on a piezoelectric substrate that can implement multi state synapse to be utilized in neuromorphic computing platforms. In…

The presence of a domain wall trapped by a sub-micron notch is probed in two ways: through electronic transport measurements and by Magnetic Force Microscopy (MFM). We observe complex magnetic features which are consistent with numerical…

This work presents how first-principles simulations validated through experimental measurements lead to a new accurate prediction of the expected Raman shift as a function of strain in silicon. Structural relaxation of a strained primitive…