相关论文: Nanoscale compositional evolution in complex oxide…
The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has…
Computing inspired by the human brain requires a massive parallel architecture of low-power consuming elements of which the internal state can be changed. SrTiO3 is a complex oxide that offers rich electronic properties; here Schottky…
Transition metal oxides, which have a perovskite structure, have received much attention in recent decades. This is because of the very suitable properties that can be used in various industries. One of the fields where the properties of…
Resistive random-access memory (RRAM) is a promising candidate for next-generation memory devices due to its high speed, low power consumption, and excellent scalability. Metal oxides are commonly used as the oxide layer in RRAM devices due…
We demonstrate that memristive devices can be fabricated by tip-induced oxidation of thin metallic films using atomic force microscope. Electrical measurements of such prepared Ti/TiOx/Ti test structures confirmed their memristive behavior…
Resistive switching in amorphous silicon carbide (a-SiC) films deposited by a single composite target magnetron sputtering process is reported. Switching performance as a function of thickness of the films (50, 100 and 300 nm) as well as…
We show a novel magneto-resistive effect that appears in lithographically shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different…
More-versatile memory is strongly desired for end-users to protect their information in the information era. In particular, bit-level switchable memory, from rewritable to read-only function, allows end-users to prevent any important data…
Complex systems with nonlinear response mechanisms can be applied as reservoir computers for energy-efficient machine learning tasks. Historically explored at the macro- and meso-scale, physical reservoir computing has recently been…
We investigate the memory effects under oscillatory shear deformation of amorphous solids through computer simulations. Applications of shear deformations in all orthogonal directions show that encoded memories via this protocol are more…
We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer system.…
Complementary resistive switches (CRS) are considered as a potential solution for the sneak path problem in large-scale integration of passive crossbar resistive memory arrays. A typical CRS is composed of two bipolar memory cells that are…
Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically…
The object of this article is to review the development of ultrahigh-density, nanoscale data storage, i.e., nanostorage. As a fundamentally new type of storage system, the recording mechanisms of nanostorage may be completely different to…
Modulated martensites play an important role in magnetic shape memory alloys, because all functional properties are closely connected to the twin microstructure and the phase boundary. The nature of the modulated martensites is still…
In this research, we report the fabrication and characterization of a Ta/HfO2-x/Mo memristor. The synaptic behavior of a Ta/HfO2-x/Mo memristor has been investigated. HfO2-x (15 nm) was grown using the pulsed laser deposition (PLD) method.…
Using isothermal and temperature-dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by a plasma-enhanced atomic layer deposition method between two aluminum…
Construction and training principles have been proposed and tested for an artificial neural network based on metal-oxide thin-film nanostructures possessing bipolar resistive switching (memristive) effect. Experimental electronic circuit of…
The review of studies on memristive properties or effect of resistive switchings in four classes of high temperature superconductors is presented in order to reveal functional properties of HTSCs which become apparent in the effects under…
Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually linked to the electromigration at the nanoscale of charged…