相关论文: Security Analysis of Tunnel Field-Effect Transisto…
In this work, we investigate the transport phenomena in compound semiconductor material based buried channel Quantum Well MOSFET with a view to developing a simple and effective model for the device current. Device simulation has been…
The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to…
Modern electronics are developing electronic-optical integrated circuits, while their electronic backbone, e.g. field-effect transistors (FETs), remains the same. However, further FET down scaling is facing physical and technical…
In recent years, thin-film organic field-effect transistors (OFETs) have begun to be considered as a possible alternative to the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) used in active matrix flat panel displays…
A tunneling field effect transistor based on armchair graphene nanoribbons is studied using ballistic quantum transport simulation based on 3D real space nonequilibrium Green's function formalism. By introducing a pocket doping region near…
Programmable circuits such as general-purpose processors or FPGAs have their end-user energy efficiency strongly dependent on the program that they execute. Ultimately, it is the programmer's ability to code and, in the case of general…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and…
In this letter we propose the design and simulation study of a novel transistor, called HFinFET, which is a hybrid of a HEMT and a FinFET, to obtain excellent performance and good off state control. Followed by the description of the…
In contemporary Electronic Design Automation (EDA) tools, security often takes a backseat to the primary goals of power, performance, and area optimization. Commonly, the security analysis is conducted by hand, leading to vulnerabilities in…
Energy efficiency is a corner stone of sustainability in data center and high-performance networking. However, at present there is a notable structural mismatch between network silicon development targets and network equipment utilization…
Reducing delay, power consumption, and chip area of a logic circuit are the main targets of a designer. Most of the times, the designer sacrifices power consumption and chip area to improve delay for a given technology node. To overcome…
Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric field. We propose an analytical model for a bilayer-graphene field-effect transistor, suitable for exploring the design parameter space…
Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that…
Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer…
Security attacks are growing in an exponential manner and their impact on existing systems is seriously high and can lead to dangerous consequences. However, in order to reduce the effect of these attacks, penetration tests are highly…
We propose a Heterojunction Vertical Tunneling FET and show using self-consistent ballistic quantum transport simulations that it can provide very steep subthreshold swings and high ON current, thereby improving the scalability of Tunnel…
Quantum computing is a disruptive technology that is expected to offer significant advantages in many critical fields (e.g. drug discovery and cryptography). The security of information processed by such machines is therefore paramount.…
A small-signal equivalent circuit for graphene field-effect transistors is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of contact resistances. A methodology to separate the contact…
This paper critically examines the leakage current reduction techniques for improving the performance of poly-Si TFTs used in active matrix liquid crystal displays. This is a first comprehensive study in literature on this topic. The review…