相关论文: Security Analysis of Tunnel Field-Effect Transisto…

There is an extremely high demand for a high speed, low power, low leakage, and low noise Static Random-Access Memory (SRAM) for high performance cache memories. The energy efficiency of SRAM is of paramount importance in both high…

In recent part extensive simulation work has already been done on TFETs. However this is limited to device performance analysis. Evaluation of circuit performance is a topic that is very little touched. This is due to the non availability…

A heterojunction tunneling field effect transistor based on armchair graphene nanoribbons is proposed and studied using ballistic quantum transport simulation based on 3D real space nonequilibrium Green's function formalism. By using low…

Power consumption has emerged as a primary design constraint for integrated circuits (ICs). In the Nano meter technology regime, leakage power has become a major component of total power. Full adder is the basic functional unit of an ALU.…

In this paper, we take a fresh look at the physics and operation of Negative Capacitance FETs, and provide unambiguous feedback to the device designers by examining NC-FETs' design space for sub-60 mV/dec Subthreshold Swing (SS).…

The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…

Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by…

Transiently Powered Computers (TPCs) are novel devices that are battery-less and operate using only ambient energy. Therefore TPCs are prone to frequent power interruptions, and such the need for developing TPC-centric algorithms is a…

This paper enumerates new architecture of low power dual-edge triggered Flip-Flop (DETFF) designed at 180nm CMOS technology. In DETFF same data throughput can be achieved with half of the clock frequency as compared to single edge triggered…

The quantum efficiency, which characterizes the quality of information gain against information loss, is an important figure of merit for any realistic quantum detectors in the gradual process of collapsing the state being measured. In this…

With the exponential rise in the use of cloud services, smart devices, and IoT devices, advanced cyber attacks have become increasingly sophisticated and ubiquitous. Furthermore, the rapid evolution of computing architectures and memory…

Since the inception of the Integrated Circuit (IC), the size of the transistors used to construct them has continually shrunk. While this advancement significantly improves computing capability, fabrication costs have skyrocketed. As a…

In recent years, graphene Field-Effect-Transistors (GFETs) have demonstrated an outstanding potential for Terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz…

Large spiking neural networks (SNNs) require ultra-low power and low variability hardware for neuromorphic computing applications. Recently, a band-to-band tunneling-based (BTBT) integrator, enabling sub-kHz operation of neurons with area…

In the paper the version of the field effect tunnel nano transistor on quantum well is researched, where the control voltage is applied to the barriers surrounding the quantum well, and electron drain comes from the quantum well. Electrons…

So far, the efficiency of thermoelectric energy conversion remains low compared to traditional technologies, such as coal or nuclear. This low efficiency can be explained by connecting the thermoelastic properties of the electronic working…

Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the ``metallic cylinder on an infinite metal plate…

An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF…

The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6].…

Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…