中文
相关论文

相关论文: Security Analysis of Tunnel Field-Effect Transisto…

200 篇论文

The various benefits of multi-tenanting, such as higher device utilization and increased profit margin, intrigue the cloud field-programmable gate array (FPGA) servers to include multi-tenanting in their infrastructure. However, this…

密码学与安全 · 计算机科学 2023-07-07 Nithyashankari Gummidipoondi Jayasankaran , Hao Guo , Satwik Patnaik , Jeyavijayan , Rajendran , Jiang Hu

The charge doped into a semiconductor in a field effect transistor (FET) is generally confined to the interface of the semiconductor. A planar step at the interface causes a potential drop due to the strong electric field of the FET, which…

超导电性 · 物理学 2009-11-10 S. Wehrli , C. Helm

Hardware (HW) security issues have been emerging at an alarming rate in recent years. Transient execution attacks, in particular, pose a genuine threat to the security of modern computing systems. Despite recent advances, understanding the…

The electrical grid consists of legacy systems that were built with no security in mind. As we move towards the Industry 4.0 area though, a high-degree of automation and connectivity provides: 1) fast and flexible configuration and updates…

网络与互联网体系结构 · 计算机科学 2025-07-29 Alexios Lekidis

The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…

介观与纳米尺度物理 · 物理学 2009-10-31 Xiaohui Wang

We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used,…

其他凝聚态物理 · 物理学 2009-11-10 R. W. I. de Boer , N. N. Iosad , A. F. Stassen , T. M. Klapwijk , A. F. Morpurgo

Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in…

介观与纳米尺度物理 · 物理学 2022-03-01 I. Luk'yanchuk , A. Razumnaya , A. Sené , Y. Tikhonov , V. M. Vinokur

In this work, the source structure of an n-type thin-film tunneling FET is engineered to get better performance. An ultra-thin SiGe along with Si is used in the source of silicon-based TFET. Two structures are compared with conventional…

介观与纳米尺度物理 · 物理学 2020-08-25 Hamed Habibi , Shoeib Babaee Touski

Conventional Hardware Trojan (HT) detection techniques are based on the validation of integrated circuits to determine changes in their functionality, and on non-invasive side-channel analysis to identify the variations in their physical…

Ternary content addressable memory (TCAM), widely used in network routers and high-associativity caches, is gaining popularity in machine learning and data-analytic applications. Ferroelectric FETs (FeFETs) are a promising candidate for…

新兴技术 · 计算机科学 2023-04-14 Liu Liu , Shubham Kumar , Simon Thomann , Yogesh Singh Chauhan , Hussam Amrouch , Xiaobo Sharon Hu

Drawing from todays best-in-class solutions, we identify power-saving strategies that have succeeded in the past and look forward to new ideas and paradigms. We strongly believe that designing energy-efficient network equipment can be…

网络与互联网体系结构 · 计算机科学 2016-11-17 Luc Ceuppens , Alan Sardella , Daniel Kharitonov

The smart transformer (ST) implemented using power electronics converters, has the capability of independent voltage control and reactive power isolation between its primary and secondary terminals. This capability provides a flexibility in…

系统与控制 · 电气工程与系统科学 2019-11-18 Junru Chen , Ran Li , Alireza Soroudi , Andrew Keane , Damian Flynn , Terence ODonnell

Trends like Industry 4.0 will pose new challenges for future industrial networks. Greater interconnectedness, higher data volumes as well as new requirements for speeds as well as security will make new approaches necessary.…

密码学与安全 · 计算机科学 2022-05-26 Tim Lackorzynski , Sebastian Rehms , Tao Li , Stefan Köpsell , Hermann Härtig

Tunnel-injection lasers promise various advantages in comparison to conventional laser designs. In this paper, we present a theoretical analysis for the physics of the tunnel-injection process in quantum-dot based laser devices. We describe…

应用物理 · 物理学 2018-10-31 Stephan Michael , Michael Lorke , Marian Cepok , Christian Carmesin , Frank Jahnke

In contemporary times, the increasing complexity of the system poses significant challenges to the reliability, trustworthiness, and security of the SACRES. Key issues include the susceptibility to phenomena such as instantaneous voltage…

硬件体系结构 · 计算机科学 2024-12-23 Enrico Magliano , Alessio Carpegna , Alessadro Savino , Stefano Di Carlo

Experience shows that semiconductor switches in power electronics systems are the most vulnerable components. One of the most common ways to solve this reliability challenge is component-level redundant design. There are four possible…

系统与控制 · 电气工程与系统科学 2020-03-24 Masoud Farhadi , Mehdi Abapour , Behnam Mohammadi-Ivatloo

An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low…

The smart grid is envisioned to significantly enhance the efficiency of energy consumption, by utilizing two-way communication channels between consumers and operators. For example, operators can opportunistically leverage the delay…

最优化与控制 · 数学 2016-11-18 Yara Abdallah , Zizhan Zheng , Ness B. Shroff , Hesham El Gamal , Tarek M. El-Fouly

Numerous proposed and developed superconducting fault current limiters and self-limiting transformers limit successfully fault currents but do not provide uninterrupted supplying of consumers. A design investigated in the work combines the…

超导电性 · 物理学 2009-11-11 V. Meerovich , V. Sokolovsky

TiO2 ferroelectric field effect transistors (FeFETs) with HfZrO2 (HZO) ferroelectric dielectric layers and bottom gate topology are fabricated for applications in neuromorphic systems. Two sets of devices are fabricated with different gate…

应用物理 · 物理学 2026-05-21 Chandan Samanta , Elia Palmese , Ziyu Ouyang , Tuofu Zhama , Robinson Pino , Yuping Zeng
‹ 上一页 1 8 9 10 下一页 ›