相关论文: Security Analysis of Tunnel Field-Effect Transisto…
Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work…
Black phosphorus (BP) tunneling transistors (TFETs) using heterojunction (He) are investigated by atomistic quantum transport simulations. It is observed that edge states have a great impact on transport characteristics of BP He-TFETs,…
In the present work, we have investigated the performances of L shaped Vertical broken bandgapheterostructureInSb InAsn-channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20nm. We have…
Recently, short channel effects (SCE) and power consumption dissipation problems pose big challenges which need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters…
Security of embedded computing systems is becoming of paramount concern as these devices become more ubiquitous, contain personal information and are increasingly used for financial transactions. Security attacks targeting embedded systems…
Superconducting quantum technologies require qubit systems whose properties meet several often conflicting requirements, such as long coherence times and high anharmonicity. Here, we provide an engineering framework based on a generalized…
In this paper we study the device physics of a technique for realizing an n-p-n bipolar transistor action in the source side of a junctionless nanowire tunneling FET (BJN-TFET). In the on-state, tunneling of electrons from valence band of…
Graphene field-effect transistors (GFETs) are among the most promising platforms for ultrasensitive chemical and biological sensing due to their high carrier mobility, large surface area, and low intrinsic noise. However, conventional…
Quantum engineering entails atom by atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical…
The rise of hardware-level security threats, such as side-channel attacks, hardware Trojans, and firmware vulnerabilities, demands advanced detection mechanisms that are more intelligent and adaptive. Traditional methods often fall short in…
In Wireless Sensor Networks, the sensor nodes are battery powered small devices designed for long battery life. These devices also lack in terms of processing capability and memory. In order to provide high confidentiality to these resource…
Superconducting field-effect transitor (SuFET) and Josephson field-effect transistor (JoFET) technologies take advantage of electric field induced control of charge carrier concentration in order to modulate the channel superconducting…
Large efforts in improving thermoelectric energy conversion are devoted to energy filtering by nanometer size potential barriers. In this work we perform an analysis and optimization of such barriers for improved energy filtering. We merge…
Understanding the magnetic field sensitivity of Transition Edge Sensors (TESs) is vital in optimising the configuration of any magnetic shielding as well as the design of the TESs themselves. An experimental system has been developed to…
By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…
With the popularity of wireless charging, energy access protection and cybersecurity are gaining importance, especially in public places. Currently, the most common energy encryption method uses frequency and associated impedance variation.…
Computational grids are believed to be the ultimate framework to meet the growing computational needs of the scientific community. Here, the processing power of geographically distributed resources working under different ownerships, having…
Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders…
Consumer and defense systems demanded design and manufacturing of electronics with increased performance, compared to their predecessors. As such systems became ubiquitous in a plethora of domains, their application surface increased, thus…
The paper presents an adaptive over-relaxation method for calculating the electric potential and field intensity, for a complex tunnel transistor structure involving a split gate and a shielding boundary. The accuracy and speed of the…