相关论文: Security Analysis of Tunnel Field-Effect Transisto…

In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage,…

Triple heterojunction (THJ) TFETs have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges with respect to device dimensions and material interfaces.…

Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…

The paper discusses an application of the field effected transistor (FET) as a voltage controlled resistance which can be done in under-graduate labs either as a routine experiment or as a project.

Transient execution attacks, also called speculative execution attacks, have drawn much interest as they exploit the transient execution of instructions, e.g., during branch prediction, to leak data. Transient execution is fundamental to…

The recent advancements in hardware miniaturization capabilities have boosted the diffusion of systems based on Energy Harvesting (EH) technologies, as a means to power embedded wireless devices in a sustainable and low-cost fashion.…

Using 2-D self-consistent ballistic quantum transport simulations, we investigate the short-channel behavior of graphene field-effect transistors and its impact on the device transconductance and subsequently the intrinsic cut-off frequency…

This report investigates the potential impact of a Trojan attack on power conversion circuits, specifically a switching signal attack designed to trigger a locking of the pulse width modulation (PWM) signal that goes to a power field-effect…

Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin…

Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional…

Sub-THz bands are promising high bandwidth and data rates, and in the recent years the device technologies made large progress and provided a multitude of transceiver, power amplifier (PA) and phased array devices supporting the frequency…

During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electronic devices and circuits communities. At the same time,…

A robust power gating design using Graphene Nano-Ribbon Field Effect Transistors (GNRFET) is proposed using 16nm technology. The Power Gating (PG) structure is composed of GNRFET as a power switch and MOS power gated module. The proposed…

Over the past few years, several research groups have introduced innovative hardware designs for Trusted Execution Environments (TEEs), aiming to secure applications against potentially compromised privileged software, including the kernel.…

We propose and analyse a quantum thermal field-effect transistor (qtFET) composed of left-qubit, middle-qutrit, and right-qubit subsystems. In this architecture, the left qubit is coupled to the middle qutrit, which in turn interacts with…

The technological exploitation of ferroelectricity in CMOS electron devices offers new design opportunities, but also significant challenges from an integration, optimization and modelling perspective. We here revisit the working principle…

Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…

Graphene field-effect transistors (GFETs) are experimental devices which are increasingly seeing commercial and research applications. Simulation and modelling forms an important stage in facilitating this transition, however the majority…

Tunnel field effect transistors (TFETs) utilizing semiconductor heterojunctions have shown promise for low energy logic but presently do not display subthreshold swings steeper than the room-temperature thermal limit of 60 mV/decade. These…

A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the…