Triple heterojunction (THJ) TFETs have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges with respect to device dimensions and material interfaces. This work shows that the original THJ-TFET design with 12 nm body thickness has poor performance, because its sub-threshold swing is 50 mV/dec and the ON-current is only 6 μA/μm. To improve the performance, the doping profile of THJ-TFET is engineered to boost the resonant tunneling efficiency. The proposed THJ-TFET design shows a sub-threshold swing of 40 mV/dec over four orders of drain current and an ON-current of 325 uA/um with VGS = 0.3 V. Since THJ-TFETs have multiple quantum wells and material interfaces in the tunneling junction, quantum transport simulations in such devices are complicated. State-of-the-art mode-space quantum transport simulation, including the effect of thermalization and scattering, is employed in this work to optimize THJ-TFET design.
@article{arxiv.2010.12964,
title = {Doping profile engineered triple heterojunction TFETs with 12 nm body thickness},
author = {Chin-Yi Chen and Hsin-Ying Tseng and Hesameddin Ilatikhameneh and Tarek A. Ameen and Gerhard Klimeck and Mark J. Rodwell and Michael Povolotskyi},
journal= {arXiv preprint arXiv:2010.12964},
year = {2021}
}