The technological exploitation of ferroelectricity in CMOS electron devices offers new design opportunities, but also significant challenges from an integration, optimization and modelling perspective. We here revisit the working principle and the modelling of some novel ferroelectric based devices, with an emphasis on energy efficiency and on applications to new computational paradigms.
@article{arxiv.2105.00864,
title = {Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies},
author = {David Esseni and Riccardo Fontanini and Daniel Lizzit and Marco Massarotto and Francesco Driussi and Mirko Loghi},
journal= {arXiv preprint arXiv:2105.00864},
year = {2021}
}
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