Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices
Emerging Technologies
2023-11-08 v1
Abstract
This paper provides a brief introduction to the phenomenological aspects of the polarization in ferrroelectric materials, and then an analysis of a few selected topics related to the modelling of ferroelectrics. The description of ferroelectric-based devices is quite challenging, particularly because the ferroelectric is frequently stacked with other dielectrics or with a semiconductor, as opposed to being placed between metal electrodes. Predictive modelling of ferroelectric devices is admittedly difficult, and thus the scrutiny and calibration of the models by comparison to sound experimental data is of paramount importance.
Keywords
Cite
@article{arxiv.2311.03864,
title = {Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices},
author = {David Esseni and Francesco Driussi and Daniel Lizzit and Marco Massarotto and Mattia Segatto},
journal= {arXiv preprint arXiv:2311.03864},
year = {2023}
}
Comments
Presented at the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2023