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Monolayer of hexagonal boron nitride (h-BN), commonly known as "white graphene" is a promising wide bandgap semiconducting material for deep-ultaviolet optoelectronic devices. In this report, the light absorption of a single layer hexagonal…

介观与纳米尺度物理 · 物理学 2011-09-26 Aniruddha Konar , Raj Jana , Tian Fang , Guowang Li , William O'Brien , Debdeep Jena

The centrifugal mirror confinement scheme incorporates supersonic rotation into a magnetic mirror device, which stabilizes and heats the plasma. This concept is under investigation in the Centrifugal Mirror Fusion Experiment (CMFX) at the…

Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics far inferior to the expected intrinsic properties of graphene[1-12]. While suspending graphene above the substrate yields substantial improvement…

介观与纳米尺度物理 · 物理学 2010-10-19 C. R. Dean , A. F. Young , I. Meric , C. Lee , L. Wang , S. Sorgenfrei , K. Watanabe , T. Taniguchi , P. Kim , K. L. Shepard , J. Hone

Previous researches only reported very small interfacial thermal resistances at room temperature due to limitations in sample combinations and methods. Taking cognizance of the importance of mismatched phonon structures, we report values up…

材料科学 · 物理学 2019-04-30 Yan Yin , Busheng Wang , Jin Chen , Jiyong Yao , Wenlong Wang , Li Wang , Huaizhou Zhao , Wuming Liu , Xuedong Bai

We investigate tunneling in metal-insulator-metal junctions employing few atomic layers of hexagonal boron nitride (hBN) as the insulating barrier. While the low-bias tunnel resistance increases nearly exponentially with barrier thickness,…

介观与纳米尺度物理 · 物理学 2019-03-26 U. Chandni , K. Watanabe , T. Taniguchi , J. P. Eisenstein

Recent reported very high thermal conductivities in the cubic boron arsenide (BAs) and boron phosphide (BP) crystals could potentially provide a revolutionary solution in the thermal management of high power density devices. To fully…

We study the radiative heat flux between two nanoparticles in close vicinity to the natural hyperbolic material hBN with its optical axis oriented parallel to the interface. We show that the heat flux between the nanoparticles can be…

介观与纳米尺度物理 · 物理学 2022-10-25 Annika Ott , Yang Hu , Xiao-Hu Wu , Svend-Age Biehs

Hexagonal boron nitride (hBN) plays a central role in nanoelectronics and nanophotonics. Moreover, hBN hosts room-temperature quantum emitters and optically addressable spins, making it promising for quantum sensing and quantum photonics.…

Boundary scattering in hierarchically disordered nanomaterials is an effective way to reduce the thermal conductivity of thermoelectric materials and increase their performance. In this work we investigate thermal transport in silicon based…

材料科学 · 物理学 2019-02-27 Dhritiman Chakraborty , Laura de Sousa Oliveira , Neophytos Neophytou

We calculate theoretically the disorder-limited conductivity of monolayer and bilayer graphene on hexagonal boron nitride (h-BN) substrates, comparing our theoretical results with the recent experimental results. The comparison leads to a…

介观与纳米尺度物理 · 物理学 2011-03-17 S. Das Sarma , E. H. Hwang

Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam…

材料科学 · 物理学 2015-05-29 S. Nakhaie , J. M. Wofford , T. Schumann , U. Jahn , M. Ramsteiner , M. Hanke , J. M. J. Lopes , H. Riechert

Graphene is impermeable to all gases and liquids, and even such a small atom as hydrogen is not expected to penetrate through graphene's dense electronic cloud within billions of years. Here we show that monolayers of graphene and hexagonal…

Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and…

介观与纳米尺度物理 · 物理学 2020-06-19 J. Sonntag , J. Li , A. Plaud , A. Loiseau , J. Barjon , J. H. Edgar , C. Stampfer

Hexagonal boron nitride is a wide bandgap semiconductor with a very high thermal and chemical stability often used in devices operating under extreme conditions. The growth of high-purity crystals has recently revealed the potential of this…

材料科学 · 物理学 2016-05-04 G. Cassabois , P. Valvin , B. Gil

The reduction of the thermal conductivity in nanostructures opens up the possibility of exploiting for thermoelectric purposes also materials such as silicon, which are cheap, available and sustainable but with a high thermal conductivity…

介观与纳米尺度物理 · 物理学 2018-02-14 G. Pennelli , E. Dimaggio , M. Macucci

The hexagonal boron nitride (hBN) encapsulation has been widely used in the electronics applications of 2D materials to improve device performance by protecting 2D materials against contamination and degradation. It is often assumed that…

材料科学 · 物理学 2019-06-18 Xu Han , Jiangxiazi Lin , Junwei Liu , Ning Wang , Ding Pan

We predict an additional thermal transport pathway across metal/non-metal interfaces with large electron-phonon non-equilibrium via evanescent radiative heat transfer. In such systems, electron scattering processes vary drastically and can…

介观与纳米尺度物理 · 物理学 2025-04-21 William D. Hutchins , Saman Zare , Mehran Habibzadeh , Sheila Edalatpour , Patrick E. Hopkins

Aiming to improve fabrication protocols for boron nitride and graphene (h-BNG) lateral heterostructures, we studied the growth of h-BNG thin films on platinum and their behavior in an oxygen environment. We employed a surface science…

This study investigates the thermal expansion coefficient of two-dimensional (2D) functionalized boron nitride (f-BN) materials using first-principles density functional theory (DFT). Two-dimensional materials, particularly hexagonal boron…

Hexagonal boron nitride (hBN) is a natural hyperbolic material that supports both volume-confined hyperbolic polaritons (HPs) and sidewall-confined hyperbolic surface polaritons (HSPs). In this work, we demonstrate effective excitation,…

介观与纳米尺度物理 · 物理学 2018-05-08 S. Dai , M. Tymchenko , Y. Yang , Q. Ma , M. Pita-Vidal , K. Watanabe , T. Taniguchi , P. Jarillo-Herrero , M. M. Fogler , A. Alù , D. N. Basov