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We study the inhomogeneity of the electronic pairing gap observed by STM near the surface of Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+\delta}$ to be correlated with interstitial O defects. We treat the problem in a slave boson mean field theory of a…

超导电性 · 物理学 2015-05-30 Wei Chen , Marc Gabay , Peter J Hirschfeld

We present a detailed first principles density functional theory study of intrinsic and extrinsic point defects in monolayer (ML) WSe2. Among the intrinsic point defects, Se vacancies (Sevac) have the lowest formation energy (disregarding…

材料科学 · 物理学 2019-01-17 Yu Jie Zheng , Su Ying Quek

Self-consistent calculations using the Perdew-Zunger self-interaction correction (PZ-SIC) to local density and gradient dependent energy functionals are presented for the binding energy and equilibrium geometry of small molecules as well as…

原子与分子团簇 · 物理学 2013-08-30 Simon Klüpfel , Peter Klüpfel , Hannes Jónsson

Isolated oxygen impurities and fully oxidized structures of four stable two-dimensional (2D) SiS structures are investigated by {\em ab initio} density functional calculations. Binding energies of oxygen impurities for all the four 2D SiS…

材料科学 · 物理学 2019-04-23 Zhengnan Li , Shuai Dong , Jie Guan

We present a computational study of the electronic properties of amorphous SiO2. The ionic configurations used are the ones generated by an earlier molecular dynamics simulations in which the system was cooled with different cooling rates…

无序系统与神经网络 · 物理学 2009-10-30 Thorsten Koslowski , Walter Kob , Katharina Vollmayr

Atomic effective pseudopotentials enable atomistic calculations at the level of accuracy of density functional theory for semiconductor nanostructures with up to fifty thousand atoms. Since they are directly derived from ab-initio…

材料科学 · 物理学 2024-03-14 Surender Kumar , Hanh Bui , Gabriel Bester

Using first principles calculations we have studied the formation energies, electron and hole affinities, and electronic levels of intrinsic point defects in zircon. The atomic structures of charged interstitials, vacancies, Frenkel pairs…

材料科学 · 物理学 2007-05-23 J. M. Pruneda , Emilio Artacho

The silicon vacancy is a prominent intrinsic defect of cubic SiC (3C-SiC) to which much effort has been devoted so far, experimentally and theoretically. We calculate its properties using the GW approximation that does not suffer from the…

材料科学 · 物理学 2015-05-20 Fabien Bruneval , Guido Roma

All inorganic halide perovskites offer promising optoelectronic properties at low cost, but their structural softness and thermal instability limit applications. Density functional theory using the FP-LAPW method (WIEN2k) was used to study…

材料科学 · 物理学 2026-04-28 Sikander Azam , Asif Zaman , Qaiser Rafiq , Amin Ur Rahman , Saleem Ayaz Khan

Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic…

The structural properties and the band structures of the charge-transfer insulating oxides SrO, MgO and SrTiO3 are computed both within density functional theory in the local density approximation (LDA) and in the Hedin's GW scheme for…

凝聚态物理 · 物理学 2009-10-31 G. Cappellini , S. Bouette-Russo , B. Amadon , C. Noguera , F. Finocchi

The electronic structure of the transparent semiconductor In2O3 has been studied by angle resolved photoemission spectroscopy upon deposition of metallic indium and also tin on the surface of the semiconductor. By deposition of metallic…

材料科学 · 物理学 2016-03-02 M. Nazarzahdemoafi , F. Titze , S. Machulik , C. Janowitz , Z. Galazka , R. Manzke , M. Mulazzi

We present a comprehensive study of the optical properties of InAs/InP self-assembled quantum dots (QDs) using an empirical pseudopotential method and configuration interaction treatment of the many-particle effects. The results are…

材料科学 · 物理学 2015-05-20 Ming Gong , Weiwei Zhang , Zhuming Han , G. -C. Guo , Lixin He

The diffusion of intrinsic defects in 3C-SiC is studied using an ab initio method based on density functional theory. The vacancies are shown to migrate on their own sublattice. The carbon split-interstitials and the two relevant silicon…

材料科学 · 物理学 2009-11-10 Michel Bockstedte , Alexander Mattausch , Oleg Pankratov

Defects in halide perovskites play an essential role in determining the efficiency and stability of the resulting optoelectronic devices. Here, we present a systematic study of intrinsic point defects in six primary metal halide…

材料科学 · 物理学 2022-01-03 Haibo Xue , Geert Brocks , Shuxia Tao

We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in…

First-principles calculations reported here illuminate the effects of the interfacial properties of $\alpha$-Al$_{2}$O$_{3}$ and graphene, with emphasis on the structural and electronic properties. Various contact interfaces and different…

The properties of neutral defects in SrTiO3 are calculated using the screened hybrid density functional of Heyd, Scuseria, and Ernzerhof. The formation energies, the crystal field splittings affecting the SrTiO3 band structure, and the…

材料科学 · 物理学 2013-06-28 Fedwa El-Mellouhi , Edward N Brothers , Melissa J Lucero , Gustavo E Scuseria

We study the importance of self-interaction errors in density functional approximations for various water-ion clusters. We have employed the Fermi-L\"owdin orbital self-interaction correction (FLOSIC) method in conjunction with LSDA, PBE,…

We report the density-functional calculations that systematically clarify the stable forms of carbon-related defects and their energy levels in amorphous SiO$_2$ using the melt-quench technique in molecular dynamics. Considering the…

材料科学 · 物理学 2018-12-03 Yu-ichiro Matsushita , Atsushi Oshiyama