相关论文: Mechanical strain in capped and uncapped self-asse…

Recent experiments reveal that the strained bulk HgTe can be regard as a three-dimensional topological insulator (TI). Motivated by this, we explore the strain effects on the magnetotransport properties of the HgTe surface states at…

We present an atomistic study of the strain field, the one-particle electronic spectrum and the oscillator strength of the fundamental optical transition in chemically disordered In$_{x}$Ga$_{1-x}$As pyramidal quantum dots (QDs).…

The interaction of crystalline defects leads to strain hardening in bulk metals. Metals with high stacking fault energy (SFE), such as aluminum, tend to have low strain hardening rates due to an inability to form stacking faults and…

Surface traps and associated emission in quantum dots (QDs) sought a lot of research attention because of the fundamental interests apart from their influence on the emission characteristics. In ref [Acc. Chem. Res. Vol 43 (2) pp 190, 2010]…

At high growth temperatures, the misfit strain at the boundary of Ge quantum dots on Si(001) is relieved by formation of trenches around the base of the islands. The depth of the trenches has been observed to saturate at a level that…

The influence of various strains on crystal and electronic structures of superconducting FeSe has been studied ab initio. We consider changes in the Fermi surface nesting with a vector Q=(0.5,0.5)*(2\pi /a) as crucial for rising…

We present many-body \textit{ab initio} calculations of the electronic and optical properties of semiconducting zigzag carbon nanotubes under uniaxial strain. The GW approach is utilized to obtain the quasiparticle bandgaps and is combined…

We determine conditions for the formation of compressible stripes near the quantum Hall effect (QHE) edges of top-gated epitaxial graphene on Si-terminated SiC (G/SiC) and compare those to graphene exfoliated onto insulating substrate in…

In a recent Letter [N. Lehto and S. Oberg, Phys. Rev. Lett. 80, 5568 (1998)], Lehto and Oberg investigated the effects of strain fields on the core structure of the 90-degree partial dislocation in silicon, especially the influence of the…

Heteroepitaxial Ge0.98Mn0.02 quantum dots on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was observed, with no indicators of second phase formation in the surface morphology. We…

With the reported synthesis of a fully planar 2D silicon carbide (SiC) allotrope, the possibilities of its technological applications are enormous. Recently, several authors have computationally studied the structures and electronic…

We have studied the band and optical properties of self-assembled quantum wires. In particular, the band structures and optical matrix elements of strained multiple quantum-wires (QWR's) are investigated theoretically via the effective…

Spatially nonuniform strain is important for engineering the pseudomagnetic field and band structure of graphene. Despite the wide interest in strain engineering, there is still a lack of control on device-compatible strain patterns due to…

Using three-dimensional k.p calculation including strain and piezoelectricity, we showed that the size of the quantum dot (QD) in the growth direction determines the influence of the (In,Ga)As capping layer on the optical properties of…

Multi-crystalline silicon is widely used for producing low-cost and high-efficiency solar cells. During crystal growth and device fabrication, silicon solar cells contain grain boundaries (GBs) which are preferential segregation sites for…

Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod…

It is widely accepted that the properties of most semiconductor nanocrystals can be tuned by their core size, shape and material. In covalent semiconductor nanocrystal materials, such as silicon, germanium or carbon, certain degree of…

Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator Cu$_x$Bi$_2$Se$_3$ as additional copper atoms are deposited onto the cleaved crystal surface. Carrier…

The model systems for self-organized quantum dots formed from elemental and compound semiconductors, namely Ge grown on Si(001) and InAs on GaAs(001), are comparatively studied by scanning tunneling microscopy. It is shown that in both…

We propose a novel concept of achieving silicon quantum dots with radiative rates enhanced by more than two orders of magnitude up to the values characteristic for direct band gap semiconductors. Our tight-binding simulations show how the…