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In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications.…

介观与纳米尺度物理 · 物理学 2024-07-17 Priyanka Sinha , Prasanta K. Panigrahi , Bheemalingam Chittari

We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is…

介观与纳米尺度物理 · 物理学 2013-11-14 T. P. Kaloni , M. Tahir , U. Schwingenschlögl

Hexagonal boron nitride is an ideal dielectric to form two-dimensional heterostructures due to the fact that it can be exfoliated to be just few atoms thick and its a very low density of defects. By placing graphene nanoribbons on high…

介观与纳米尺度物理 · 物理学 2018-11-28 Yohanes S. Gani , D. S. L. Abergel , Enrico Rossi

For most practical applications in electronic devices, two-dimensional materials should be transferred onto semiconducting or insulating substrates, since they are usually generated on metallic substrates. However, the transfer often leads…

材料科学 · 物理学 2019-07-24 Yan Qian , Erjun Kan , Kaiming Deng , Haiping Wu

Current interest in two-dimensional materials extends from graphene to others systems like single-layer hexagonal boron-nitride (h-BN), for the possibility of making heterogeneous structures to achieve exceptional properties that cannot be…

材料科学 · 物理学 2013-09-04 Jiangtao Wu , Baolin Wang , Yujie Wei , Ronggui Yang , Mildred Dresselhaus

We examine the electronic structure of recently fabricated in-plane heterojunctions of zigzag graphene nanoribbons embedded in hexagonal boron nitride. We focus on hitherto unexplored interface configurations in which both edges of the…

介观与纳米尺度物理 · 物理学 2024-06-03 Michele Pizzochero , Nikita V. Tepliakov , Johannes Lischner , Arash A. Mostofi , Efthimios Kaxiras

Silicene is a promising 2D Dirac material as a building block for van der Waals heterostructures (vdWHs). Here we investigate the electronic properties of hexagonal boron nitride/silicene (BN/Si) vdWHs using first-principles calculations.…

材料科学 · 物理学 2021-03-09 Ze-Bin Wu , Yu-Yang Zhang , Geng Li , Shixuan Du , Hong-Jun Gao

We examine the effect of a hexagonal boron nitride (hBN) substrate on electron transport through graphene nanojunctions just before gap formation. Junctions in vacuum and on hBN are formed using classical molecular dynamics to create…

介观与纳米尺度物理 · 物理学 2016-06-29 Hatef Sadeghi , Sara Sangtarash , Colin Lambert

The hexagonal boron nitride (hBN) encapsulation has been widely used in the electronics applications of 2D materials to improve device performance by protecting 2D materials against contamination and degradation. It is often assumed that…

材料科学 · 物理学 2019-06-18 Xu Han , Jiangxiazi Lin , Junwei Liu , Ning Wang , Ding Pan

Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material that is emerging as a powerful platform for quantum optics and nanophotonics. In this work, we demonstrate whispering gallery mode silica microresonators hybridized with…

Ferromagnetic contacts are widely used to inject spin polarized currents into non-magnetic materials such as semiconductors or 2-dimensional materials like graphene. In these systems, oxidation of the ferromagnetic materials poses an…

介观与纳米尺度物理 · 物理学 2016-03-01 Simon Zihlmann , Péter Makk , C. A. F. Vaz , Christian Schönenberger

Hexagonal boron nitride sheets have been noted especially for their enhanced properties as substrates for sp2 carbon-based nanodevices. To evaluate whether such enhanced properties would remain under various realistic conditions, we…

介观与纳米尺度物理 · 物理学 2015-06-23 Seoung-Hun Kang , Gunn Kim , Young-Kyun Kwon

Folded regions are commonly encountered in a number of hexagonal boron nitride (h-BN) based bulk and nanostructured materials. Two types of structural modifications occur in folded h-BN layers: local curvature at the folded edges and…

材料科学 · 物理学 2022-11-21 Anthony Impellizzeri , Michele Amato , Chris P. Ewels , Alberto Zobelli

Hexagonal boron nitride is a wide bandgap semiconductor with a very high thermal and chemical stability often used in devices operating under extreme conditions. The growth of high-purity crystals has recently revealed the potential of this…

材料科学 · 物理学 2016-05-04 G. Cassabois , P. Valvin , B. Gil

Interference of double moire patterns of graphene (G) encapsulated by hexagonal boron nitride (BN) can alter the electronic structure features near the primary/secondary Dirac points and the electron-hole symmetry introduced by a single…

介观与纳米尺度物理 · 物理学 2020-01-03 Nicolas Leconte , Jeil Jung

The negatively charged boron vacancy ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN) has garnered significant attention among defects in two-dimensional materials. This owes, in part, to its deterministic generation,…

Two-dimensional (2D) semiconductors are promising material candidates for next-generation nanoelectronics. However, there are fundamental challenges related to their metal-semiconductor (MS) contacts which limit the performance potential…

First-principles density functional calculations are performed in C-BN heterojunctions. It is shown that the magnetism of the edge states in zigzag shaped graphene strips and polarity effects in BN strips team up to give a spin asymmetric…

材料科学 · 物理学 2012-10-22 J. M. Pruneda

We report on the fabrication and electrical characterization of both single layer graphene micron-sized devices and nanoribbons on a hexagonal boron nitride substrate. We show that the micron-sized devices have significantly higher mobility…

介观与纳米尺度物理 · 物理学 2013-02-06 Dominik Bischoff , Tobias Krähenmann , Susanne Dröscher , Michelle A. Gruner , Clément Barraud , Thomas Ihn , Klaus Ensslin

Hexagonal boron nitride (hBN) plays a central role in nanoelectronics and nanophotonics. Moreover, hBN hosts room-temperature quantum emitters and optically addressable spins, making it promising for quantum sensing and quantum photonics.…

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