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Regular nanoscale perforations in graphene (graphene antidot lattices, GAL) are known to lead to a gap in the energy spectrum, thereby paving a possible way towards many applications. This theoretical prediction relies on a perfect…

介观与纳米尺度物理 · 物理学 2015-06-12 Shengjun Yuan , Rafael Roldán , Antti-Pekka Jauho , M. I. Katsnelson

Deformations in graphene systems are central elements in the novel field of {\it straintronics}. Various strain geometries have been proposed to produce specific properties but their experimental realization has been limited. Because…

介观与纳米尺度物理 · 物理学 2016-09-20 R. Carrillo-Bastos , C. León , D. Faria , A. Latgé , Eva Y. Andrei , N. Sandler

We show the emergence of fractional quantum Hall states in dry-transferred chemical vapor deposition (CVD) derived graphene assembled into heterostructures for magnetic fields from below 3 T to 35 T. Effective composite-fermion filling…

介观与纳米尺度物理 · 物理学 2020-09-14 M. Schmitz , T. Ouaj , Z. Winter , K. Rubi , K. Watanabe , T. Taniguchi , U. Zeitler , B. Beschoten , C. Stampfer

By systematically studying the proton selectivity of free-standing graphene membranes in aqueous solutions we demonstrate that protons are transported by passing through defects. We study the current-voltage characteristics of single-layer…

介观与纳米尺度物理 · 物理学 2015-12-09 Michael I. Walker , Philipp Braeuninger-Weimar , Robert S. Weatherup , Stephan Hofmann , Ulrich F. Keyser

Certain layered transition metal dichalcogenides (TMDCs), such as 1T-TaS2, show a rich collection of charge density wave (CDW) phases at different temperatures, and their atomic structures and electron conductions have been widely studied.…

A significant advance toward achieving practical applications of graphene as a two-dimensional material in nanoelectronics would be provided by successful synthesis of both n-type and p-type doped graphene. However reliable doping and a…

Doping of semiconductor is necessary for various device applications. Exploiting chemistry at its reactive edges was shown to be an effective way to dope an atomically thin graphene nanoribbon (GNR) for realizing new devices in recent…

介观与纳米尺度物理 · 物理学 2011-07-26 Yijian Ouyang , Stefano Sanvito , Jing Guo

We present a magneto-Raman study on high-quality single-layer graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride by a dry transfer technique. By analyzing the Raman D, G, and 2D peaks, we…

Large-area graphene is a new material with properties that make it desirable for advanced scaled electronic devices1. Recently, chemical vapor deposition (CVD) of graphene and few-layer graphene using hydrocarbons on metal substrates such…

材料科学 · 物理学 2015-05-13 Xuesong Li , Weiwei Cai , Luigi Colombo , Rodney S. Ruoff

We report nanocrystalline carbon impurities coexisting with graphene synthesized via chemical vapor deposition (CVD) on platinum. We observe micron-size island-like impurity layers, which can easily be mistaken for second graphene layers in…

介观与纳米尺度物理 · 物理学 2014-08-04 Jinglei Ping , Michael S. Fuhrer

Results of quantum mechanical simulations of the influence of edge disorder on transport in graphene nanoribbon metal oxide semiconductor field-effect transistors (MOSFETs) are reported. The addition of edge disorder significantly reduces…

介观与纳米尺度物理 · 物理学 2008-04-10 D. Basu , M. J. Gilbert , L. F. Register , A. H. MacDonald , S. K. Banerjee

Using ab initio thermodynamics, the stability of a wide range of hydrocarbon adsorbates under various chemical vapor deposition (CVD) conditions (temperature, methane and hydrogen pressures) used in experimental graphene growth protocols at…

材料科学 · 物理学 2019-06-14 Mie Andersen , Juan Santiago Cingolani , Karsten Reuter

We demonstrate injection, transport and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized wafer scale single layer (SLG) and bilayer graphene (BLG). We observe spin…

Nanostructuring of graphene is in part motivated by the requirement to open a gap in the electronic band structure. In particular, a periodically perforated graphene sheet in the form of an antidot lattice may have such a gap. Such systems…

介观与纳米尺度物理 · 物理学 2014-09-09 Stephen R. Power , Antti-Pekka Jauho

Void-defect is a possible origin of ferromagnetic feature on pure carbon materials. In our previous paper, void-defect on graphene-nanoribbon show highly polarized spin configuration. In this paper, we studied cases for graphene molecules…

星系天体物理 · 物理学 2021-07-06 Norio Ota , Aigen Li , Laszlo Nemes , Masaaki Otsuka

Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on…

材料科学 · 物理学 2019-06-14 B. C. Worley , S. Kim , T. J. Ha , S. Park , R. Haws , P. Rossky , D. Akinwande , A. Dodabalapur

Graphene has shown impressive properties for nanoelectronics applications including a high mobility and a width-dependent bandgap. Use of graphene in nanoelectronics would most likey be in the form of graphene nanoribbons (GNRs) where the…

介观与纳米尺度物理 · 物理学 2015-05-18 Yinxiao Yang , Raghunath Murali

We report on the fabrication and characterization of high-quality chemical vapor-deposited (CVD) bilayer graphene (BLG). In particular, we demonstrate that CVD-grown BLG can mechanically be detached from the copper foil by an hexagonal…

介观与纳米尺度物理 · 物理学 2018-05-09 Michael Schmitz , Stephan Engels , Luca Banszerus , Kenji Watanabe , Takashi Taniguchi , Christoph Stampfer , Bernd Beschoten

Plasma-enhanced chemical vapor deposition (PECVD) provides a low-temperature, highly-efficient, and catalyst-free route to fabricate graphene materials by virtue of the unique properties of plasma. In this paper, we conduct reactive…

等离子体物理 · 物理学 2022-05-18 Shiwen Wu , Dezhao Huang , Haoliang Yu , Siyu Tian , Arif Malik , Tengfei Luo , Guoping Xiong

Recently, a contamination-free dry transfer method for graphene grown by chemical vapor deposition (CVD) has been reported that allows to directly pick-up graphene from the copper growth substrate using a flake of hexagonal boron nitride…