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We report graphene films composed mostly of one or two layers of graphene grown by controlled carbon precipitation on the surface of polycrystalline Ni thin films during atmospheric chemical vapor deposition(CVD). Controlling both the…

Grain boundaries are topological defects that often have a disordered character. Disorder implies that understanding general trends is more important than accurate investigations of individual grain boundaries. Here we present trends in the…

材料科学 · 物理学 2010-11-24 Sami Malola , Hannu Häkkinen , Pekka Koskinen

We study the transport of charge carriers through finite graphene structures. The use of numerical exact kernel polynomial and Green function techniques allows us to treat actual sized samples beyond the Dirac-cone approximation.…

介观与纳米尺度物理 · 物理学 2013-11-13 A. Pieper , G. Schubert , G. Wellein , H. Fehske

A bottom-up chemical vapor deposition (CVD) process for the growth of graphene nanomesh films is demonstrated. The process relies on silicon nanospheres to block nucleation sites for graphene CVD on copper substrates. These spheres are…

材料科学 · 物理学 2016-09-16 Matthias König , Günther Ruhl , Joerg-Martin Batke , Max C. Lemme

We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO$_2$ substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when…

介观与纳米尺度物理 · 物理学 2010-10-06 Atindra Nath Pal , Ageeth A. Bol , Arindam Ghosh

Grain boundaries (GBs) are ubiquitous in large-scale graphene samples, playing a crucial role in their overall performance. Due to their complexity, they are usually investigated as model structures, under the assumption of a fully relaxed…

In this research work, roll-to-roll chemical vapor deposited graphene device electronic transport properties are benchmarked to elucidate and comprehend mobility degradation in the real-world commercial application of graphene devices.…

介观与纳米尺度物理 · 物理学 2022-10-13 Bhupesh Bishnoi

Most materials in available macroscopic quantities are polycrystalline. Graphene, a recently discovered two-dimensional form of carbon with strong potential for replacing silicon in future electronics, is no exception. There is growing…

介观与纳米尺度物理 · 物理学 2010-09-28 Oleg V. Yazyev , Steven G. Louie

In this work, the effect of the ion fluence-dependent defect formation on the modification of surface electronic and optical properties of graphene has been investigated. The chemical vapor deposited (CVD) graphene was irradiated with swift…

材料科学 · 物理学 2022-06-14 Tanmay Mahanta , Sanjeev Kumar , D. Kanjilal , Tanuja Mohanty

We utilize classical molecular dynamics to study the the quality (Q)-factors of monolayer CVD-grown graphene nanoresonators. In particular, we focus on the effects of intrinsic grain boundaries of different orientations, which result from…

介观与纳米尺度物理 · 物理学 2012-05-29 Zenan Qi , Harold S. Park

The properties of polycrystalline materials are often dominated by the size of their grains and by the atomic structure of their grain boundaries. These effects should be especially pronounced in 2D materials, where even a line defect can…

Transport measurements have revealed several exotic electronic properties of graphene. The possibility to influence the electronic structure and hence control the conductivity by adsorption or doping with adatoms is crucial in view of…

Electronic, transport, and spin properties of grain boundaries (GBs) are investigated in electrostatically doped graphene at finite electron densities within the Hartree and Hubbard approximations. We demonstrate that depending on the…

介观与纳米尺度物理 · 物理学 2013-09-03 S. Ihnatsenka , I. V. Zozoulenko

We report on ballistic transport over more than 28 \mu m in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer…

The Hall effect, and the diagonal resistance, which indicates a residual resistivity $\rho_{xx} \approx h/4e^{2}$, are experimentally examined over the p$\leftrightarrow$n transition about the nominal neutrality point in chemical vapor…

介观与纳米尺度物理 · 物理学 2016-02-17 Ramesh G. Mani

Previous statistical studies on the mechanical properties of chemical-vapor-deposited (CVD) suspended graphene membranes have been performed by means of measuring individual devices or with techniques that affect the material. Here, we…

Copper (Cu) is the electrical conductor of choice in many categories of electrical wiring, with household and building installations being the major market of this metal. This work demonstrates the coating of Cu wires - with diameters…

Chemical vapour deposition (CVD) is a promising method for producing large-scale graphene (Gr). Nevertheless, microscopic inhomogeneity of Gr grown on traditional metal substrates such as copper or nickel results in a spatial variation of…

Two-dimensional carbon, or graphene, is a semi-metal that presents unusual low-energy electronic excitations described in terms of Dirac fermions. We analyze in a self-consistent way the effects of localized (impurities or vacancies) and…

强关联电子 · 物理学 2009-11-11 N. M. R. Peres , F. Guinea , A. H. Castro Neto

Graphene grown by chemical vapor deposition and supported on SiO2 and sapphire substrates was studied following controlled introduction of defects induced by 35 keV carbon ion irradiation. Changes in Raman spectra following fluences ranging…