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A graphyne (GY) family composed of the triple (sp) and double (sp2) bonds-hybridized carbon atoms is a promising allotrope of carbon for the development of nanoscale electronic devices. Unlike graphene, the GY family containing carbon sp…

材料科学 · 物理学 2020-10-27 Sohyeon Seo , Jungsue Choi , Soo Min Cho , Seungeun Lee , Hyoyoung Lee

Chemical functionalization has proven to be a promising means of tailoring the unique properties of graphene. For example, hydrogenation can yield a variety of interesting effects, including a metal-insulator transition or the formation of…

介观与纳米尺度物理 · 物理学 2025-06-06 Jose E. Barrios Vargas , Jesper T. Falkenberg , David Soriano , Aron W. Cummings , Mads Brandbyge , Stephan Roche

We develop a theory for the compressibility and quantum capacitance of disordered monolayer and bilayer graphene including the full hyperbolic band structure and band gap in the latter case. We include the effects of disorder in our theory,…

介观与纳米尺度物理 · 物理学 2011-03-09 D. S. L. Abergel , E. H. Hwang , S. Das Sarma

Graphene's exceptional mechanical properties are crucial for its integration into advanced technological applications. However, real-world synthesis and functionalization processes introduce structural modifications that can compromise its…

The chapter combines analytical (statistical-thermodynamic and kinetic) with numerical (Kubo-Greenwood-formalism-based) approaches used to ascertain an influence of the configurations of point (impurities, vacancies) and line (grain…

介观与纳米尺度物理 · 物理学 2014-06-04 T. M. Radchenko , V. A. Tatarenko , I. Yu. Sagalianov , Yu. I. Prylutskyy

Emerging flexible and wearable technologies such as healthcare electronics and energy-harvest devices could be transformed by the unique properties of graphene. The vision for a graphene-driven industrial revolution is motivating intensive…

材料科学 · 物理学 2015-06-30 Thomas H. Bointon , Matthew D. Barnes , Saverio Russo , Monica F. Craciun

Graphene has opened new avenues of research in quantum transport, with potential applications for coherent electronics. Coherent transport depends sensitively on scattering from microscopic disorder present in graphene samples: electron…

介观与纳米尺度物理 · 物理学 2015-05-18 Jesse Berezovsky , Robert M Westervelt

Topological defects in graphene, dislocations and grain boundaries, are still not well understood despites the considerable number of experimental observations. We introduce a general approach for constructing dislocations in graphene…

介观与纳米尺度物理 · 物理学 2010-05-21 Oleg V. Yazyev , Steven G. Louie

We investigated the growth of twisted graphene on graphene/silicon carbide (SiC-G) templates by metal-free chemical vapor deposition (CVD) through a sequential thermal (ST) process, which exploits the ultraclean surface of SiC-G without…

材料科学 · 物理学 2024-02-08 Yao Yao , Taiki Inoue , Makoto Takamura , Yoshitaka Taniyasu , Yoshihiro Kobayashi

We present transport measurements on quantum dots of sizes 45, 60 and 80 nm etched with an Ar/O2-plasma into a single graphene sheet, allowing a size comparison avoiding effects from different graphene flakes. The transport gaps and…

介观与纳米尺度物理 · 物理学 2013-08-01 D. Kölbl , D. M. Zumbühl

The effect of grain boundary (GB) structure, size and shape on thermal conductivity of polycrystalline graphene is studied in the framework of the deformation potential approach. Precise analytical expressions for the phonon mean free path…

材料科学 · 物理学 2019-03-25 S. E. Krasavin , V. A. Osipov

Applying time-dependent photoemission we unravel the graphene growth process on a metallic surface by chemical vapor deposition (CVD). Graphene CVD growth is in stark contrast to the standard growth process of two--dimensional films because…

材料科学 · 物理学 2015-05-13 Alexander Grüneis , Kurt Kummer , Denis V. Vyalikh

Using the tight-binding model, we investigate the influence of vacancy disorder on electrical transport in graphene Hall bars in the presence of quantizing magnetic fields. Disorder, induced by a random distribution of monovacancies, breaks…

介观与纳米尺度物理 · 物理学 2016-12-21 M. D. Petrović , F. M. Peeters

Multilayer graphene (MLG) films were grown by chemical vapour deposition (CVD) on molybdenum carbide ($MoC_{x}$) substrates. We fabricated the catalytic $MoC_{x}$ films by plasma enhanced atomic layer deposition (PEALD). The mechanism of…

应用物理 · 物理学 2020-01-01 Eldad Grady , Chenhui Li , Oded Raz , W. M. M. Kessels , Ageeth A. Bol

We present a study of different models of local disorder in graphene. Our focus is on the main effects that vacancies -- random, compensated and uncompensated --, local impurities and substitutional impurities bring into the electronic…

无序系统与神经网络 · 物理学 2008-03-25 Vitor M. Pereira , J. M. B. Lopes dos Santos , A. H. Castro Neto

Graphene layers grown by chemical vapour deposition (CVD) method and transferred from Cu-foils to the oxidized Si-substrates were investigated by spectroscopic ellipsometry (SE), Raman and X-Ray Photoelectron Spectroscopy (XPS) methods. The…

材料科学 · 物理学 2018-02-23 Aarne Kasikov , Tauno Kahro , Leonard Matisen , Margus Kodu , Aivar Tarre , Helina Seemen , Harry Alles

Approach-to-equilibrium molecular dynamics simulations have been used to study thermal transport in nanocrystalline graphene sheets. Nanostructured graphene has been created using an iterative process for grain growth from initial seeds…

材料科学 · 物理学 2015-11-26 Konstanze R. Hahn , Claudio Melis , Luciano Colombo

We have characterized the structure of 176 different single-layer graphene grain boundaries using $>$1000 experimental HRTEM images using a semi-automated structure processing routine. We introduce a new algorithm for generating grain…

材料科学 · 物理学 2015-08-04 Colin Ophus , Ashivni Shekhawat , Haider I Rasool , Alex Zettl

To improve atomically controlled chemical vapor deposition (CVD) growth of graphene, understanding the evolution from various carbon species to a graphene nuclei on various catalyst surfaces is essential. Experimentally, an ultra-stable…

材料科学 · 物理学 2017-07-17 Junfeng Gao , Feng Ding

We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current…