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相关论文: Bulk-edge correspondence in fractional Chern insul…

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Recently, fractional Chern insulators (FCIs), also called fractional quantum anomalous Hall (FQAH) states, have been theoretically established in lattice systems with topological flat bands. These systems exhibit similar fractionalization…

强关联电子 · 物理学 2015-12-18 Ai-Lei He , Wei-Wei Luo , Yi-Fei Wang , Chang-De Gong

At partial filling of a flat band, strong electronic interactions may favor gapped states harboring emergent topology with quantized Hall conductivity. Emergent topological states have been found in partially filled Landau levels and…

We construct a two-band lattice model whose bands can carry the Chern numbers C=0,pm1,pm2. By means of numerical exact diagonalization, we show that the most favorable situation that selects fractional Chern insulators (FCIs) is not…

强关联电子 · 物理学 2012-11-26 Adolfo G. Grushin , Titus Neupert , Claudio Chamon , Christopher Mudry

Moir\'e flatbands with high Chern numbers (C>1) offer opportunities to study the fractional quantum anomalous Hall effects that go beyond the Landau level paradigm with C=1, which remain unexplored yet. Here, we target the novel topological…

The bulk-edge correspondence is a fundamental principle of topological wave physics, which states that the difference in gap Chern numbers between the interfaced materials is equal to the net number of topological edge modes. Although this…

光学 · 物理学 2022-02-09 Samaneh Pakniyat , S. Ali Hassani Gangaraj , George W Hanson

When one of the graphene layers of Magic Angle Twisted Bilayer Graphene is nearly aligned with its hexagonal boron nitride substrate (a configuration dubbed TBG/hBN), the active electronic bands are nearly flat, and have a Chern number…

强关联电子 · 物理学 2019-12-25 Cécile Repellin , T. Senthil

We rigorously yet concisely prove the bulk-edge correspondence for general $d$-dimensional ($d$D) topological insulators in complex Altland-Zirnbauer classes, which states that the bulk topological number equals to the edge-mode index.…

介观与纳米尺度物理 · 物理学 2024-11-05 Zixian Zhou , Liang-Liang Wan

Fractional Chern insulators (FCIs), having properties similar to those of the fractional quantum Hall effect, have been established numerically in various toy models. To fully explore their fundamental physics and to develop practical…

强关联电子 · 物理学 2016-11-26 Wei Li , Zheng Liu , Yong-Shi Wu , Yan Chen

We detect the topological properties of Chern insulators with strong Coulomb interactions by use of cluster perturbation theory and variational cluster approach. The common scheme in previous studies only involves the calculation of the…

强关联电子 · 物理学 2019-07-30 Zhao-Long Gu , Kai Li , Jian-Xin Li

We report the observation of a new series of Abelian and non-Abelian topological states in fractional Chern insulators (FCI). The states appear at bosonic filling nu= k/(C+1) (k, C integers) in several lattice models, in fractionally filled…

强关联电子 · 物理学 2015-03-20 A. Sterdyniak , C. Repellin , B. Andrei Bernevig , N. Regnault

The experimental realization of the Harper-Hofstadter model in ultra-cold atomic gases has placed fractional states of matter in these systems within reach---a fractional Chern insulator state (FCI) is expected to emerge for sufficiently…

强关联电子 · 物理学 2018-09-13 Xiao-Yu Dong , Adolfo G. Grushin , Johannes Motruk , Frank Pollmann

Fractionally filled Chern bands with strong interactions may give rise to fractional Chern insulator (FCI) states, the zero-field analogue of the fractional quantum Hall effect. Recent experiments have demonstrated the existence of FCIs in…

介观与纳米尺度物理 · 物理学 2024-08-15 Jiabin Yu , Jonah Herzog-Arbeitman , Minxuan Wang , Oskar Vafek , B. Andrei Bernevig , Nicolas Regnault

We perform an exact-diagonalization study of quasihole excitations for the two-component Halperin $(221)$ state in the lowest Landau level and for several $\nu=1/3$ bosonic fractional Chern insulators in topological flat bands with Chern…

强关联电子 · 物理学 2019-01-25 Błażej Jaworowski , Nicolas Regnault , Zhao Liu

A Chern insulator (quantum anomalous Hall insulator) phase is demonstrated to exist in a typical semi-Dirac system, the TiO2/VO2 heterostructure. By combining first-principles calculations with Wannier-based tight-binding model, we…

材料科学 · 物理学 2015-11-04 Huaqing Huang , Zhirong Liu , Hongbin Zhang , Wenhui Duan , David Vanderbilt

The understanding of the Chern insulator and anomalous quantum Hall effect (AQHE) in terms of chiral edge states in confined systems is the first aim of the paper. The model we use consists in a diatomic square lattice with hopping to the…

介观与纳米尺度物理 · 物理学 2018-09-12 B. Ostahie , M. Nita , A. Aldea

We address the question of whether fractionally filled bands with a nontrivial Chern index in zero external field could also exhibit a Fractional Quantum Hall Effect (FQHE). Numerical works suggest this is possible. Analytic treatments are…

强关联电子 · 物理学 2011-09-13 Ganpathy Murthy , R. Shankar

The bulk-edge correspondence characterizes topological insulators and superconductors. We generalize this concept to the bulk-corner correspondence and the edge-corner correspondence in two dimensions. In the bulk-corner (edge-corner)…

介观与纳米尺度物理 · 物理学 2020-09-23 Motohiko Ezawa

We prove a general theorem on the relation between the bulk topological quantum number and the edge states in two dimensional insulators. It is shown that whenever there is a topological order in bulk, characterized by a non-vanishing Chern…

介观与纳米尺度物理 · 物理学 2009-11-11 Xiao-Liang Qi , Yong-Shi Wu , Shou-Cheng Zhang

The fractional quantum Hall effect has recently been shown to exist in heterostructures of van der Waals materials without an externally applied magnetic field, e.g. in twisted bilayers of MoTe$_2$. These fractional Chern insulators break…

强关联电子 · 物理学 2025-09-23 Sahana Das , Glenn Wagner , Titus Neupert

Fractional Chern insulators (FCIs) have attracted intensive attention for the realization of fractional quantum Hall states in the absence of an external magnetic field. Most of FCIs have been proposed on two-dimensional (2D) Euclidean…

强关联电子 · 物理学 2024-11-11 Ai-Lei He , Lu Qi , Yongjun Liu , Yi-Fei Wang