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Energy band realignment at the interfaces between materials in heterostructures can give rise to unique electronic characteristics and non-trivial low-dimensional charge states. In a homojunction of monolayer and multilayer MoS$_2$, the…

材料科学 · 物理学 2017-07-21 Ying Jia , Teodor K. Stanev , Erik J. Lenferink , Nathaniel P. Stern

Based on the first-principles plane wave calculations, we studied the functionalization of the two-dimensional single layer MoS$_2$ structure via adatom adsorption and vacancy defect creation. Minimum energy adsorption sites are determined…

材料科学 · 物理学 2011-05-26 C. Ataca , S. Ciraci

Molybdenum disulfide (MoS2) nanosheet, one of two dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors including graphene. However, its potential in carrier…

介观与纳米尺度物理 · 物理学 2014-06-27 Hee Sung Lee , Seung Su Baik , Sung-Wook Min , Pyo Jin Jeon , Jin Sung Kim , Kyujin Choi , Sunmin Ryu , Hyoung Joon Choi , Jae Hoon Kim , Seongil Im

Interface-induced superconductivity has recently been achieved by stacking a magnetic topological insulator layer on an antiferromagnetic FeTe layer. However, the mechanism driving this emergent superconductivity remains unclear. Here, we…

The production of new sensors, transducers and electronic components can benefit from the possibility to alter the electronic transport of metal-semicondutor-metal (MSM) devices. 2D materials are extremely appealing for those new…

材料科学 · 物理学 2018-07-04 Igor Neri , Miquel López-Suárez

Two-dimensional semiconductors exhibit pronounced many-body effects and intense optical responses due to strong coulombic interactions. Consequently, subtle differences in photoexcitation conditions can strongly influence how the material…

A photoinduced current of a layered MoS2-based transistor is studied from first-principles. Under the illumination of circular polarized light, a valley-polarized current is generated, which can be tuned by the gate voltage. For monolayer…

介观与纳米尺度物理 · 物理学 2017-01-09 Yunjin Yu , Yanfeng Zhou , Langhui Wan , Bin Wang , Fuming Xu , Yadong Wei , Jian Wang

We study topological phase transitions and topological quantum field effect transistor in monolayer Molybdenum Disulfide (MoS2) using a two-band Hamiltonian model. Without considering the quadratic (q^2) diagonal term in the Hamiltonian, we…

介观与纳米尺度物理 · 物理学 2018-04-30 H. Simchi , M. Simchi , M. Fardmanesh , F. M. Peeters

We combine linear and non-linear optical spectroscopy at 4K with ab initio calculations to study the electronic bandstructure of MoSe2 monolayers. In 1-photon photoluminescence excitation (PLE) and reflectivity we measure a separation…

材料科学 · 物理学 2015-11-05 G. Wang , I. C. Gerber , L. Bouet , D. Lagarde , A. Balocchi , M. Vidal , E. Palleau , T. Amand , X. Marie , B. Urbaszek

We report that the refractive index of transition metal dichacolgenide (TMDC) monolayers, such as MoS2, WS2, and WSe2, can be substantially tuned by > 60% in the imaginary part and > 20% in the real part around exciton resonances using…

光学 · 物理学 2017-08-02 Yiling Yu , Yifei Yu , Lujun Huang , Haowei Peng , Liwei Xiong , Linyou Cao

Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2…

Silicon-based dielectric nanoantennas provide an effective platform for engineering light-matter interactions in van der Waals semiconductors. Here, we demonstrate near-field coupling between monolayer MoS2 and silicon nanoantennas arranged…

In this study, terahertz (THz) absorption and transmission of monolayer MoS$_{2}$ was calculated under different carrier concentrations. Results showed that the THz absorption of monolayer MoS$_{2}$ is very small even under high carrier…

光学 · 物理学 2016-01-20 Xue-Yong Deng , Xin-Hua Deng , Fu-Hai Su , Nian-Hua Liu , Jiang-Tao Liu

Molybdenum disulfide (MoS2) is a highly attractive 2D material due to its interesting electronic properties. Recent experimental advances confirm the possibility of further tuning the electronic properties of MoS2 through the fabrication of…

材料科学 · 物理学 2017-04-17 B Mortazavi , A Ostadhossein , T Rabczuk , ACT van Duin

For designing an efficient terahertz (THz) emitter, the defect density of the semiconductors is smartly increased to reduce carrier lifetime, which subsequently lowers the overall power output of the semiconductor. To overcome this…

The experimental studies about monolayer transition metal dichalcogenides in the recent year reveal this kind of compounds have many metastable phases with unique physical properties, not just 1H phases. Here, we focus on the 1T'' phase and…

材料科学 · 物理学 2020-02-12 Yanfeng Ge , Wenhui Wan , Yulu Ren , Yong Liu

We investigate the nonequilibrium topological phases of monolayer 1T$^\prime$--MoS$_2$ under high-frequency circularly polarized driving using a low-energy $k\!\cdot\!p$ Hamiltonian combined with a van Vleck expansion. The off-resonant…

介观与纳米尺度物理 · 物理学 2025-11-20 Mohammad Mortezaei Nobahari

We report here gate-tunable memristors based on monolayer MoS2 grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel consisting of polycrystalline MoS2 films with grain sizes…

应用物理 · 物理学 2018-03-02 Vinod K. Sangwan , Hong-Sub Lee , Mark C. Hersam

We demonstrate a graphene-MoS2 architecture integrating multiple field-effect transistors and we independently probe and correlate the conducting properties of van der Waals coupled graphene-MoS2 contacts with the ones of the MoS2 channels.…

We investigate the excitonic transitions in single- and few-layer MoSe2 phototransistors by photocurrent spectroscopy. The measured spectral profiles show a well-defined peak at the optically active (bright) A0 exciton resonance. More…