相关论文: Rewriting Codes for Flash Memories
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell can take on q different levels corresponding to the number of electrons it contains. Increasing the cell level is easy; however, reducing a cell…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell is implemented as either NAND or NOR floating gate. NAND flash is currently the most widely used type of flash memory. In a NAND flash memory,…
A rewriting code construction for flash memories based upon lattices is described. The values stored in flash cells correspond to lattice points. This construction encodes information to lattice points in such a way that data can be written…
The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…
In this work, we study a new model of defect memory cells, called partially stuck-at memory cells, which is motivated by the behavior of multi-level cells in non-volatile memories such as flash memories and phase change memories. If a cell…
Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to increase but are hard to decrease. In a general rewriting model, the stored data changes its value with certain patterns. The patterns of data…
Recently, flash memories have become a competitive solution for mass storage. The flash memories have rather different properties compared with the rotary hard drives. That is, the writing of flash memories is constrained, and flash…
Flash memory devices are winning the competition for storage density against magnetic recording devices. This outcome results from advances in physics that allow storage of more than one bit per cell, coupled with advances in signal…
Flash memory is a write-once medium in which reprogramming cells requires first erasing the block that contains them. The lifetime of the flash is a function of the number of block erasures and can be as small as several thousands. To…
\emph{Resistive memories}, such as \emph{phase change memories} and \emph{resistive random access memories} have attracted significant attention in recent years due to their better scalability, speed, rewritability, and yet non-volatility.…
This paper constructs WOM codes that combine rewriting and error correction for mitigating the reliability and the endurance problems in flash memory. We consider a rewriting model that is of practical interest to flash applications where…
In this paper, we propose a construction of non-binary WOM (Write-Once-Memory) codes for WOM storages such as flash memories. The WOM codes discussed in this paper are fixed rate WOM codes where messages in a fixed alphabet of size $M$ can…
An erasure code is said to be a code with sequential recovery with parameters $r$ and $t$, if for any $s \leq t$ erased code symbols, there is an $s$-step recovery process in which at each step we recover exactly one erased code symbol by…
The most important challenge in the scaling down of flash memory is its increased inter-cell interference (ICI). If side information about ICI is known to the encoder, the flash memory channel can be viewed as similar to Costa's "writing on…
The pivotal storage density win achieved by solid-state devices over magnetic devices in 2015 is a result of multiple innovations in physics, architecture, and signal processing. One of the most important innovations in that regard is…
This paper presents a practical writing/reading scheme in nonvolatile memories, called balanced modulation, for minimizing the asymmetric component of errors. The main idea is to encode data using a balanced error-correcting code. When…
In this paper, for any fixed positive integers $t$ and $q>2$, we construct $q$-ary codes correcting a burst of at most $t$ deletions with redundancy $\log n+8\log\log n+o(\log\log n)+\gamma_{q,t}$ bits and near-linear encoding/decoding…
The pivotal storage density win achieved by solid-state devices over magnetic devices recently is a result of multiple innovations in physics, architecture, and signal processing. Constrained coding is used in Flash devices to increase…
In this work, we study the performance of different decoding schemes for multilevel flash memories where each page in every block is encoded independently. We focus on the multi-level cell (MLC) flash memory, which is modeled as a two-user…