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相关论文: Rewriting Codes for Flash Memories

200 篇论文

This paper summarizes our work on experimentally characterizing, mitigating, and recovering data retention errors in multi-level cell (MLC) NAND flash memory, which was published in HPCA 2015, and examines the work's significance and future…

硬件体系结构 · 计算机科学 2018-05-09 Yu Cai , Yixin Luo , Erich F. Haratsch , Ken Mai , Saugata Ghose , Onur Mutlu

In data storage and data transmission, certain patterns are more likely to be subject to error when written (transmitted) onto the media. In magnetic recording systems with binary data and bipolar non-return-to-zero signaling, patterns that…

信息论 · 计算机科学 2020-02-25 Ahmed Hareedy , Robert Calderbank

The error correcting performance of multi-level-cell (MLC) NAND flash memory is closely related to the block length of error correcting codes (ECCs) and log-likelihood-ratios (LLRs) of the read-voltage thresholds. Driven by this issue, this…

信息论 · 计算机科学 2020-04-14 Cheng Wang , Kang Wei , Lingjun Kong , Long Shi , Zhen Mei , Jun Li , Kui Cai

A new class of exact-repair regenerating codes is constructed by combining two layers of erasure correction codes together with combinatorial block designs, e.g., Steiner systems, balanced incomplete block designs and t-designs. The…

信息论 · 计算机科学 2013-02-20 Chao Tian , Vaneet Aggarwal , Vinay A. Vaishampayan

Two classes of turbo codes over high-order finite fields are introduced. The codes are derived from a particular protograph sub-ensemble of the (dv=2,dc=3) low-density parity-check code ensemble. A first construction is derived as a…

信息论 · 计算机科学 2016-11-17 Gianluigi Liva , Enrico Paolini , Sandro Scalise , Marco Chiani

Multiple reads of the same Flash memory cell with distinct word-line voltages provide enhanced precision for LDPC decoding. In this paper, the word-line voltages are optimized by maximizing the mutual information (MI) of the quantized…

Phase-change memory (PCM) is a promising non-volatile solid-state memory technology. A PCM cell stores data by using its amorphous and crystalline states. The cell changes between these two states using high temperature. However, since the…

信息论 · 计算机科学 2012-07-20 Minghai Qin , Eitan Yaakobi , Paul H. Siegel

Cloud computing facilitates the access of applications and data from any location by a distributed storage system. Erasure codes offer better data replication technique with reduced storage costs for more reliability. This paper considers…

信息论 · 计算机科学 2021-02-04 Srujan Teja Thomdapu , Ketan Rajawat

The read channel of a Flash memory cell degrades after repetitive program and erase (P/E) operations. This degradation is often modeled as a function of the number of P/E cycles. In contrast, this paper models the degradation as a function…

信息论 · 计算机科学 2016-10-13 Haobo Wang , Nathan Wong , Tsung-Yi Chen , Richard D. Wesel

Block-based programming languages like Scratch have become increasingly popular as introductory languages for novices. These languages are intended to be used with a "tinkering" approach which allows learners and teachers to quickly…

This paper considers coding for so-called partially stuck memory cells. Such memory cells can only store partial information as some of their levels cannot be used due to, e.g., wear out. First, we present a new code construction for…

信息论 · 计算机科学 2021-03-18 Haider Al Kim , Sven Puchinger , Antonia Wachter-Zeh

Let $\mathcal{B}(\cdot)$ be an error ball function. A set of $q$-ary sequences of length $n$ is referred to as an \emph{$(n,q,N;\mathcal{B})$-reconstruction code} if each sequence $\boldsymbol{x}$ within this set can be uniquely…

信息论 · 计算机科学 2025-08-21 Yubo Sun , Gennian Ge

This paper presents a novel achievable scheme for coded caching systems with $N$ files and $K$ users, specifically when $N \leq K$. This new scheme employs linear coding both during the placement phase - where cache contents are linear…

信息论 · 计算机科学 2024-06-11 Yinbin Ma , Daniela Tuninetti

Recently introduced 3D vertical flash memory is expected to be a disruptive technology since it overcomes scaling challenges of conventional 2D planar flash memory by stacking up cells in the vertical direction. However, 3D vertical flash…

信息论 · 计算机科学 2015-09-16 Yongjune Kim , Robert Mateescu , Seung-Hwan Song , Zvonimir Bandic , B. V. K. Vijaya Kumar

This paper considers coding for so-called partially stuck (defect) memory cells. Such memory cells can only store partial information as some of their levels cannot be used fully due to, e.g., wearout. First, we present new constructions…

信息论 · 计算机科学 2022-02-16 Haider Al Kim , Sven Puchinger , Ludo Tolhuizen , Antonia Wachter-Zeh

We study error-correcting codes for permutations under the infinity norm, motivated by a novel storage scheme for flash memories call rank modulation. In this scheme, a set of $n$ flash cells are combined to create a single virtual…

信息论 · 计算机科学 2009-08-02 Itzhak Tamo , Moshe Schwartz

This paper presents an explicit construction for an $((n=2qt,k=2q(t-1),d=n-(q+1)), (\alpha = q(2q)^{t-1},\beta = \frac{\alpha}{q}))$ regenerating code (RGC) over a field $\mathbb{F}_Q$ having rate $\geq \frac{t-2}{t}$. The RGC code can be…

信息论 · 计算机科学 2022-04-07 Birenjith Sasidharan , Myna Vajha , P. Vijay Kumar

A write-once memory (wom) is a storage medium formed by a number of ``write-once'' bit positions (wits), where each wit initially is in a `0' state and can be changed to a `1' state irreversibly. Examples of write-once memories include SLC…

信息论 · 计算机科学 2010-01-05 Yunnan Wu , Anxiao Jiang

Erasure codes play an important role in storage systems to prevent data loss. In this work, we study a class of erasure codes called Multi-Erasure Locally Recoverable Codes (ME-LRCs) for flash memory array. Compared to previous related…

信息论 · 计算机科学 2017-01-24 Pengfei Huang , Eitan Yaakobi , Paul H. Siegel

Distributed storage systems provide reliable access to data through redundancy spread over individually unreliable nodes. Application scenarios include data centers, peer-to-peer storage systems, and storage in wireless networks. Storing…

网络与互联网体系结构 · 计算机科学 2008-03-06 Alexandros G. Dimakis , P. Brighten Godfrey , Yunnan Wu , Martin J. Wainwright , Kannan Ramchandran