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相关论文: Infrared dielectric properties of low-stress silic…

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Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed…

光学 · 物理学 2021-01-29 Giuseppe Cataldo , Edward J. Wollack , Ari D. Brown , Kevin H. Miller

Silicon-based dielectric is crucial for many superconducting devices, including high-frequency transmission lines, filters, and resonators. Defects and contaminants in the amorphous dielectric and at the interfaces between the dielectric…

天体物理仪器与方法 · 物理学 2023-08-09 M. Lisovenko , Z. Pan , P. S. Barry , T. Cecil , C. L. Chang , R. Gualtieri , J. Li , V. Novosad , G. Wang , V. Yefremenko

The complex dielectric functions of LiNbO$_2$ were determined using optical transmittance and reflectance spectroscopies at room temperature. The measured dielectric function spectra reveal distinct structures at several bandgap energies.…

材料科学 · 物理学 2023-10-30 T. Kurachi , T. Yamaguchi , E. Kobayashi , T. Soma , A. Ohtomo , T. Makino

We demonstrate the thermo-optic properties of silicon-rich silicon nitride (SRN) films deposited using plasma-enhanced chemical vapor deposition (PECVD). Shifts in the spectral response of Mach-Zehnder Interferometers (MZIs) as a function…

应用物理 · 物理学 2023-07-19 Hani Nejadriahi , Alex Friedman , Rajat Sharma , Steve Pappert , Yeshaiahu Fainman , Paul Yu

The dielectric properties of selected conductively-loaded polyimide samples are characterized in microwave through far infrared wavebands. These materials, belonging to the Vespel\textsuperscript{\textregistered} family, are more readily…

Material absorption is a key limitation in nanophotonic systems; however, its characterization is often obscured by scattering and diffraction loss. Here we show that nanomechanical frequency spectroscopy can be used to characterize the…

We analyze the results of scanning near-field infrared spectroscopy performed on thin films of a-SiO2 on Si substrate. The measured near-field signal exhibits surface-phonon resonances whose strength has a strong thickness dependence in the…

The structure, composition and electrophysical characteristics of low-temperature silicon dioxide films under influence of various technology factors, such as ion implantation, laser irradiation, thermal and photonic annealing, have been…

材料科学 · 物理学 2017-08-03 B. I. Seleznev

The objective of this work was to study the RF sputtering process parameters optimisation for deposition of Silicon Nitride thin films. The process parameters chosen to be varied were deposition power, deposition duration, flow rate of…

应用物理 · 物理学 2017-11-29 Sachin S Bharadwaj , GR Rajkumar , B W Shivaraj , M Krishna

Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide and many other 2D nanomaterials based electronic and photonic devices. To optimize the performance of these…

The profile of suspended silicon nitride thin films patterned with one-dimensional subwavelength grating structures is investigated using Atomic Force Microscopy. We first show that the results of the profilometry can be used as input to…

介观与纳米尺度物理 · 物理学 2021-02-18 Ali Akbar Darki , Alexios Parthenopoulos , Jens Vinge Nygaard , Aurélien Dantan

A robust process for fabricating intrinsic single-photon emitters in silicon nitride has been recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with the…

Far-infrared and terahertz spectroscopy of ferroelectric soft and central modes in thin films on substrates is reviewed. In addition to classical displacive proper ferroelectrics, also incipient and relaxor ferroelectrics and multiferroics…

材料科学 · 物理学 2016-11-17 Jan Petzelt , Stanislav Kamba

The temperature dependence of optical constants of titanium nitride thin film is investigated using spectroscopic ellipsometry between 1.4 to 5 eV in the temperature range 300 K to 650 K in steps of 50 K. The real and imaginary parts of the…

材料科学 · 物理学 2016-11-26 S. Tripura Sundari , R. Ramaseshan , Feby Jose , S. Dash , A. K. Tyagi

In this work, we present a technique to determine the mid-infrared refractive indices of thin superconducting films using Fourier transform infrared spectroscopy (FTIR). In particular, we performed FTIR transmission and reflection…

光学 · 物理学 2025-09-03 Dip Joti Paul , Tony X. Zhou , Karl K. Berggren

For semiconductors and semimetals possessing a narrow gap between bands with different parity, the dispersion of the dielectric function is explicitly evaluated in the infrared region. The imaginary part of the dielectric function has a…

材料科学 · 物理学 2013-05-29 L. A. Falkovsky

Brownian thermal noise of thin-film coatings is a fundamental limit for high-precision experiments based on optical resonators such as gravitational-wave interferometers. Here we present the results of a research activity aiming to develop…

Besides being the foundational material for microelectronics, in optics, crystalline silicon has long been used for making infrared lenses and mirrors. More recently, silicon has become the key material to achieve large-scale integration of…

光学 · 物理学 2014-03-07 Yu Chen , Hongtao Lin , Juejun Hu , Mo Li

In this study, rigorous numerical calculation was utilized to characterize the focal properties of mid-infrared silicon microlens with the size about tens of micrometers. It is found that the focal shift phenomenon also exists in…

This work focuses on the characterization of various bulk silicon (Si) samples using Fourier Transform InfraRed (FTIR) and grating spectrometers in order to get them suitable for applications in astronomy. Different samples at different…

材料科学 · 物理学 2018-08-21 B. Uzakbaiuly , D. B. Tanner , J. Ge , J. Degallaix , A. S. Markosyan
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