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The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high…

The success of isolating small flakes of atomically thin layers through mechanical exfoliation has triggered enormous research interest in graphene and other two-dimensional materials. For device applications, however, controlled large-area…

材料科学 · 物理学 2014-07-17 Yingnan Liu , Rudresh Ghosh , Di Wu , Ariel Ismach , Rodney Ruoff , Keji Lai

Monolayer molybdenum disulphide (MoS2) is a promising two-dimensional direct-bandgap semiconductor with potential applications in atomically thin and flexible electronics. An attractive insulating substrate or mate for MoS2 (and related…

Monolayer molybdenum disulphide (MoS$_2$) is a promising two-dimensional (2D) material for nanoelectronic and optoelectronic applications. The large-area growth of MoS$_2$ has been demonstrated using chemical vapor deposition (CVD) in a…

We show that atomically thin molybdenum disulfide (MoS2) crystals can grow without any underlying substrates into free-standing atomically-thin layers, maintaining their planar 2D form. Using this property, we present a new mechanism for 2D…

Two-dimensional MoS2 is a crystalline semiconductor with high potential for numerous technologies. Research in recent years has sought to exploit the direct band gap and high carrier mobility properties of monolayer MoS2 for functional…

材料科学 · 物理学 2018-11-14 Paul Quayle , Bin Zhang , Jacob Leach , Brian Bersch , Joshua Robinson , Shanee Pacley

The ability to synthesize high-quality samples over large areas and at low cost is one of the biggest challenges during the developmental stage of any novel material. While chemical vapor deposition (CVD) methods provide a promising…

Synthesis of large-scale, uniform, easily transferable, and highly crystalline monolayer (1L) molybdenum disulfide (MoS2) on different substrates is a challenge and could decide its suitability for opto-electronic device applications.…

2D nanoelectronics based on single-layer MoS2 offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS2 and fabrication of devices and circuits for the…

Heterostructures involving two-dimensional (2D) transition metal dichalcogenides and other materials such as graphene have a strong potential to be the fundamental building block of many electronic and opto-electronic applications. The…

Chemical vapor deposition (CVD) of two-dimensional (2D) materials such as monolayer MoS2 typically involves the conversion of vapor-phase precursors to a solid product in a process that may be described as a vapor-solid-solid (VSS) mode.…

Large-area MoS2 atomic layers are synthesized on SiO2 substrates by chemical vapor deposition using MoO3 and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth…

Understanding the microscopic mechanism of chemical vapor deposition (CVD) growth of two-dimensional molybdenum disulfide (2D MoS2) is a fundamental issue towards the function-oriented controlled growth. In this work, we report results on…

材料科学 · 物理学 2017-04-21 Dancheng Zhu , Haibo Shu , Feng Jiang , Danhui Lv , Vijay Asokan , Omar Omar , Jun Yuan , Ze Zhang , Chuanhong Jin

We report for the first time the direct growth of Molybdenum disulfide (MoS$_2$) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on…

We report on fabrication of large-scale arrays of suspended molybdenum disulfide (MoS2) atomic layers, as two-dimensional (2D) MoS2 nanomechanical resonators. We employ a water-assisted lift-off process to release chemical vapor deposited…

介观与纳米尺度物理 · 物理学 2016-07-15 Hao Jia , Rui Yang , Ariana E. Nguyen , Sahar N. Alvillar , Thomas Empante , Ludwig Bartels , Philip X. -L. Feng

Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and technology applications. However, obtaining high crystal quality…

Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide…

Molybdenum disulfide (MoS2) is a particularly interesting member of the family of two-dimensional (2D) materials due to its semiconducting and tunable electronic properties. Currently, the most reliable method for obtaining high-quality…

Controlling the interconnection of neighboring seeds (nanoflakes) to full coverage of the textured substrate is the main challenge for the large-scale conformal growth of atomic-thick transition metal dichalcogenides by chemical vapor…

Developing novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS2) over an insulating…

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