相关论文: Scattering of band carriers by neutral and charged…
Finite-bandwidth effects on the temperature dependence of the mobility of injected carriers in pure organic crystals are explored for a simplifed case of impurity scattering. Temperature-dependent bandwidth effects are discussed briefly…
The impact of neutral impurity scattering of electrons on the charge drift mobility in high purity n-type germanium crystals at 77 Kelvin is investigated. We calculated the contributions from ionized impurity scattering, lattice scattering,…
We reported a new result of the neutral impurity scattering of holes that has impact on the charge drift mobility in high purity p-type germanium crystals at 77 Kelvin. The charge carrier concentration, mobility and resistivity are measured…
The mobility of charge carriers in a semiconductor nanowire is explored as a function of increasing radius, assuming low temperatures where impurity scattering dominates. The competition between increased cross-section and the concurrent…
The past decade has seen the emergence of ab initio computational methods for calculating phonon-limited carrier mobilities in semiconductors with predictive accuracy. More realistic calculations ought to take into account additional…
As applied to the numerical simulation of electron transport and scattering processes in semiconductors an efficient model describing the scattering of electrons by the ionized impurities is proposed. On the example of GaAs at 77 and 300 K…
Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed…
We present a novel theory of charge-carrier mobilities in organic molecular crystals of high purity. Our approach is based on Holstein's original concept of small-polaron bands but generalized with respect to the inclusion of nonlocal…
The nonproportional response and related energy resolution of LaBr$_3$:Ce$^3+$ scintillation crystals doped with different concentrations of cerium were studied between 80K and 450K. For Ce$^3+$ concentration of 5% and 30%, LaBr$_3$ showed…
Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the…
The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and…
We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing…
Anisotropic charge carrier transport in black phosphorus limited by ionized impurity scattering at finite temperature is explored theoretically. The anisotropic electronic structure enters the calculation for the polarizability (screening),…
The temperature dependence of experimental charge carrier mobility is commonly used as a predictor of the dominant carrier scattering mechanism in semiconductors, particularly in thermoelectric applications. In this work, we critically…
The scattering of electrons on impurities with internal degrees of freedom is bound to produce the signatures of the scatterer's own dynamics and results in nontrivial electronic transport properties. Previous studies of polaronic…
The scattering of carriers by charged dislocations in semiconductors is studied within the framework of the linearized Boltzmann transport theory with an emphasis on examining consequences of the extreme anisotropy of the scattering…
We propose and study theoretically a new mechanism of electron-impurity scattering in doped seminconductors with large dielectric constant. It is based upon the idea of \textit{vector} character of deformations caused in the crystalline…
Predicting charge transport in organic molecular crystals is notoriously challenging. Carrier mobility calculations in organic semiconductors are dominated by quantum chemistry methods based on charge hopping, which are laborious and only…
The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of $1-20\times10^3$ cm$^2$/V sec. Comparing the experimental data with the theoretical transport…
We derive the ratio of transport and single particle relaxation times in three and two - dimensional electron gases due to scattering from charged dislocations in semiconductors. The results are compared to the respective relaxation times…