相关论文: Silicon-On-Insulator Lateral Dual Sidewall Schottk…
The potential barrier height at the interface formed by a metal contact and multiple one-dimensional (1D) quasi-ballistic channels in field-effect transistors (FETs) is evaluated across different carbon nanotube and nanowire device…
A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin…
Entropy-based inference methods have gained traction for improving the reliability of Large Language Models (LLMs). However, many existing approaches, such as entropy minimization techniques, suffer from high computational overhead and fail…
With the evolution of radio frequency (RF)/microwave technology, there is a demand for circuits which are able to meet highly challenging RF frontend specifications. Silicon-on-insulator (SOI) technology is one of the leading platforms for…
This study proposes a simulation-based design for a Silicon-On-Insulator (SOI) ring resonator with a Figure of Merit (FOM) of 56.15 and a high sensitivity of up to 730 nm/RIU. The Finite-Difference Time-Domain (FDTD) technique was used to…
Silicon-on-insulator (SOI) waveguides with different geometries have been employed to design various integrated optical components. Reducing the bending radius of the SOI waveguides with low bending loss is essential in minimizing the…
An increase in power consumption necessitates a low-power circuit technology to extend Moore's law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and…
Inverse scattering has a broad applicability in quantum mechanics, remote sensing, geophysical, and medical imaging. This paper presents a robust direct reduced order model (ROM) method for solving inverse scattering problems based on an…
Learning a stable Linear Dynamical System (LDS) from data involves creating models that both minimize reconstruction error and enforce stability of the learned representation. We propose a novel algorithm for learning stable LDSs. Using a…
Silicon photonic integrated circuits critically depend on compact on-chip light sources, for which nanowire (NW) lasers are an attractive solution. However, their practical implementation is often limited by broad emission linewidths and…
A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The…
In this paper we report a new PNP Surface Accumulation Layer Transistor (SALTran) on SOI which uses the concept of surface accumulation of holes near the emitter contact to significantly improve the current gain. Using two-dimensional…
In this paper, we present the unique features exhibited by modified asymmetrical Double Gate (DG) silicon on insulator (SOI) MOSFET. The proposed structure is similar to that of the asymmetrical DG SOI MOSFET with the exception that the…
This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics…
Silicon photonics has many attractive features but faces a major issue: inefficient and slow photodetection in the telecom range. New metal-semiconductor Schottky photodetectors based on intraband absorption address this problem, but their…
We propose second-order topological insulators (SOTIs) whose lattice structure has the hexagonal symmetry $C_{6}$ in three and two dimensions. We start with a three-dimensional weak topological insulator constructed on the stacked…
The doped silicon regions (tubs) in PWFDSOI MOSFET cause significant reduction in OFF current by reducing the number of carriers contributing to the OFF current. The emphasis of the simulation and device physics study on PWFDSOI MOSFET…
Inverse design through optimization of dielectric photonic devices is a very powerful tool. However so far the direct solver used in the design process is almost always restricted to solve Maxwell's equation in two dimensions (2D). Here we…
The cold source field-effect transistor (CSFET) is promising for reducing power dissipation in integrated circuits by engineering the density of states at the injecting source. Existing CSFET designs utilizing Dirac-source metals or…
For the upcoming 6G wireless networks, reconfigurable intelligent surfaces are an essential technology, enabling dynamic beamforming and signal manipulation in both reflective and transmissive modes. It is expected to utilize frequency…