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相关论文: Scattering by flexural phonons in suspended graphe…

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The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature $T \gtrsim 10\,\,$K, and the resistivity increases…

Graphene has an extremely high carrier mobility partly due to its planar mirror symmetry inhibiting scattering by the highly occupied acoustic flexural phonons. Electrostatic gating of a graphene device can break the planar mirror symmetry…

介观与纳米尺度物理 · 物理学 2017-02-01 Tue Gunst , Kristen Kaasbjerg , Mads Brandbyge

We investigate the scattering of long-wavelength flexural phonons against grain boundaries in graphene using molecular dynamics simulations. Three symmetric tilt grain boundaires are considered: one with a misorientation angle of…

材料科学 · 物理学 2015-06-19 Edit E. Helgee , Andreas Isacsson

Rotation and reflection symmetries impose that out-of-plane (flexural) phonons of free-standing graphene membranes have a quadratic dispersion at long wavelength and can be excited by charge carriers in pairs only. As a result, we find that…

介观与纳米尺度物理 · 物理学 2010-08-12 Eros Mariani , Felix von Oppen

Out-of-plane vibrations are considered as the dominant factor limiting the intrinsic carrier mobility of suspended two-dimensional materials at low carrier concentrations. Anharmonic coupling between in-plane and flexural phonon modes is…

材料科学 · 物理学 2019-08-14 A. N. Rudenko , A. V. Lugovskoi , A. Mauri , Guodong Yu , Shengjun Yuan , M. I. Katsnelson

We have studied electron scattering by out-of-plane (flexural) phonons in doped suspended bilayer graphene. We have found the bilayer membrane to follow the qualitative behavior of the monolayer cousin. In the bilayer, different electronic…

材料科学 · 物理学 2011-08-04 H. Ochoa , Eduardo V. Castro , M. I. Katsnelson , F. Guinea

In this paper we investigate the electron-phonon contribution to the resistivity of suspended single layer graphene. In-plane as well as flexural phonons are addressed in different temperature regimes. We focus on the intrinsic…

介观与纳米尺度物理 · 物理学 2015-05-19 Eros Mariani , Felix von Oppen

The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is independent of carrier density n. Here we show that…

材料科学 · 物理学 2008-04-14 J. H. Chen , C. Jang , S. Xiao , M. Ishigami , M. S. Fuhrer

We study the impact of BN's phonons on the electrical resistivity of hBN-encapsulated graphene. While encapsulation yields high-mobility devices, the surrounding BN itself introduces remote scattering from polar optical phonons, whose role…

We study the effect exerted by the electrons on the flexural phonons in graphene, accounting for the attractive interaction created by the exchange of electron-hole excitations. Combining the self-consistent computation of the phonon…

介观与纳米尺度物理 · 物理学 2010-03-18 Pablo San-Jose , Jose González , Francisco Guinea

We identify graphene layer on a disordered substrate as a possible system where Anderson localization of phonons can be observed. Generally, observation of localization for scattering waves is not simple, because the Rayleigh scattering is…

无序系统与神经网络 · 物理学 2018-11-15 Wei L. Z. Zhao , Konstantin S. Tikhonov , Alexander M. Finkel'stein

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…

介观与纳米尺度物理 · 物理学 2008-01-07 S. V. Morozov , K. S. Novoselov , M. I. Katsnelson , F. Schedin , D. C. Elias , J. A. Jaszczak , A. K. Geim

Density functional perturbation theory is used to analyze electron-phonon interaction in bilayer graphene. The results show that phonon scattering in bilayer graphene bears more resemblance with bulk graphite than monolayer graphene. In…

介观与纳米尺度物理 · 物理学 2010-11-29 K. M. Borysenko , J. T. Mullen , X. Li , Y. G. Semenov , J. M. Zavada , M. Buongiorno Nardelli , K. W. Kim

Inelastic phonon scattering in graphene field-effect transistors (FETs) is studied by numerically solving the Boltzmann transport equation in three dimensional real and phase spaces (x, kx, ky). A kink behavior due to ambipolar transport…

介观与纳米尺度物理 · 物理学 2015-05-27 Jyotsna Chauhan , Jing Guo

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find…

介观与纳米尺度物理 · 物理学 2008-05-12 E. H. Hwang , S. Das Sarma

The electron-phonon interaction in monolayer graphene is investigated by using density functional perturbation theory. The results indicate that the electron-phonon interaction strength is of comparable magnitude for all four in-plane…

介观与纳米尺度物理 · 物理学 2015-05-14 K. M. Borysenko , J. T. Mullen , E. A. Barry , S. Paul , Y. G. Semenov , J. M. Zavada , M. Buongiorno Nardelli , K. W. Kim

Electrostatic gating offers elegant ways to simultaneously strain and dope atomically thin membranes. Here, we report on a detailed \textit{in situ} Raman scattering study on graphene, suspended over a Si/SiO$_2$ substrate. In such a…

介观与纳米尺度物理 · 物理学 2017-01-30 Dominik Metten , Guillaume Froehlicher , Stéphane Berciaud

Using electrical transport experiments and shot noise thermometry, we find strong evidence that "supercollision" scattering processes by flexural modes are the dominant electron-phonon energy transfer mechanism in high-quality, suspended…

介观与纳米尺度物理 · 物理学 2015-11-02 Antti Laitinen , Mika Oksanen , Aurélien Fay , Daniel Cox , Matti Tomi , Pauli Virtanen , Pertti Hakonen

We study transport properties of clean suspended graphene at the Dirac point. In the absence of the electron-electron interaction, the main contribution to resistivity comes from interaction with flexural (out-of-plane deformation) phonons.…

介观与纳米尺度物理 · 物理学 2015-03-20 I. V. Gornyi , V. Yu. Kachorovskii , A. D. Mirlin

Classical thermal transport theories that preserve rotational symmetry, predict strong anharmonic scattering of out-of-plane lattice vibrational modes called flexural phonons in flat suspended graphene sheets. Such strong scattering…

材料科学 · 物理学 2026-04-07 Navaneetha K. Ravichandran
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