利用软X射线辐射对薄型全耗尽SOI像素传感器的特性表征
仪器与探测器
2015-06-03 v1
摘要
本文介绍了在高电阻率衬底上采用绝缘体上硅（SOI）技术制造的背照式像素传感器在软X射线下的特性表征结果。该传感器被减薄，并在背面植入了一层薄磷层接触。其在LBNL先进光源利用荧光辐射评估了对2.12至8.6 keV X射线的响应。
引用
@article{arxiv.1111.2151,
title = {Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation},
author = {Marco Battaglia and Dario Bisello and Richard Celestre and Devis Contarato and Peter Denes and Serena Mattiazzo and Craig Tindall},
journal= {arXiv preprint arXiv:1111.2151},
year = {2015}
}
备注
9 pages, 5 figures, submitted to Nuclear Instruments and Methods A