利用纳米束X射线衍射测定场效应晶体管中单个SiGe岛上方Si沟道的应变
介观与纳米尺度物理
2010-11-18 v1
摘要
SiGe岛用于在场效应晶体管的Si沟道中引入拉伸应变，以实现更大的跨导和更高的电流驱动能力。我们报告了对一个带有TiN+Al栅极叠层以及源极、栅极和漏极触点的完整加工且功能正常的器件进行的X射线衍射实验。利用聚焦至400 nm直径的X射线束并结合有限元模拟，探索了Si沟道中的应变场。发现Si沟道中的最大面内拉伸应变约为1%，这比最先进器件中无位错拉伸应变Si所能达到的应变高三到四倍。
引用
@article{arxiv.1011.3978,
title = {Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction},
author = {N. Hrauda and J. J. Zhang and E. Wintersberger and T. Etzelstorfer and J. Stangl and D. Carbone and C. Biasotto and V. Jovanovic and L. K. Nanver and J. Moers and D. Grützmacher and G. Bauer},
journal= {arXiv preprint arXiv:1011.3978},
year = {2010}
}
备注
The following article has been submitted to Applied Physics Letters. After it is published, it will be found at http://apl.aip.org/