基于高 k 介电层的高性能单层 WS2 场效应晶体管
材料科学
2015-10-06 v1 介观与纳米尺度物理
摘要
高质量 Al2O3 介电层与硫醇化学钝化的结合，能有效降低 WS2 的界面陷阱密度与库仑杂质密度，从而显著改善迁移率，并使电荷输运从绝缘态转变到金属态。单层 WS2 在室温（低温）下达到了 83 cm2/Vs（337 cm2/Vs）的创纪录高迁移率。我们还建立了电子输运的理论模型。
引用
@article{arxiv.1510.00826,
title = {High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics},
author = {Yang Cui and Run Xin and Zhihao Yu and Yiming Pan and Zhun-Yong Ong and Xiaoxu Wei and Junzhuan Wang and Haiyan Nan and Zhenhua Ni and Yun Wu and Tangsheng Chen and Yi Shi and Baigeng Wang and Gang Zhang and Yong-Wei Zhang and Xinran Wang},
journal= {arXiv preprint arXiv:1510.00826},
year = {2015}
}
备注
17 pages, 4 figures