相关论文: AC-coupled GaAs microstrip detectors with a new ty…

We report on a recently developed novel type of large area (62 mm x 62 mm) position sensitive silicon detector with four-corner readout. It consists of a square-shaped ion-implanted resistive anode framed by additional low-resistivity…

For many years there has been an aspiration within the community to develop curved silicon detectors for particle physics applications. We present the results from 10 x 10cm low mass support modules as a part of the "ZeroMass" project that…

Due to its high charge carrier mobility, broadband light absorption, and ultrafast carrier dynamics, graphene is a promising material for the development of high-performance photodetectors. Graphene-based photodetectors have been…

A new particle detector with sub-nanosecond time resolution capable of working in high-rate environment (rate capability of the order of $MHz/ cm^2$) is under developmnet. Semiconductive electrodes with resistivity $\rho$ up to $10^8…

The Simons Observatory (SO) is a cosmic microwave background experiment with over 67,000 polarization-sensitive transition-edge sensor (TES) detectors currently installed for use in observations and plans to increase the total detector…

Surface temperature measurements were performed with a Scanning Thermal Microscope mounted with a thermoresistive wire probe of micrometrSurface temperature measurements were performed with a Scanning Thermal Microscope mounted with a…

Monolithic Active Pixel Sensors (MAPS) in advanced CMOS imaging technologies are key to next-generation tracking systems for high-energy physics, where radiation hardness and precise vertex reconstruction are essential. As part of the ALICE…

We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimetre-scale chemical vapour deposited (CVD) single layer graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible…

We experimentally demonstrate a broadband, fabrication tolerant, CMOS compatible compact silicon waveguide taper (34.2 um) in silicon-on-insulator wire waveguides. The taper works on multi-mode interference along the length of the taper. A…

We demonstrate a small-footprint electromechanical phase shifter with a compact active length of $10\:\mu \text{m}$ fabricated on a suspended GaAs membrane, offering versatile integration with quantum-dot single-photon sources. The phase…

This study presents a fabrication process for lithium-drifted silicon (Si(Li)) detectors that, compared to previous methods, allows for mass production at a higher yield, while providing a large sensitive area and low leakage currents at…

Predictable circuit response is a critical prerequisite for accurate electronic measurements. We describe a powerful, yet straightforward, experimental method and analysis model that utilizes an affordable LCR meter in conjunction with an…

The development of gaseous detectors has been exciting again since the appearance of a MicroStrip Gas Chamber(MSGC) in 1988, which is made using a micro-electronics technology. These days lots of variations of the advanced gaseous detectors…

Extremely radiation hard sensors are needed in particle physics experiments to instrument the region near the beam pipe. Examples are beam halo and beam loss monitors at the Large Hadron Collider, FLASH or XFEL. Currently artificial diamond…

We present a simple fabrication method for the realization of suspended GaAs nanomembranes for cavity quantum optomechanics experiments. GaAs nanomembranes with an area of 1.36 mm by 1.91 mm and a thickness of 160 nm are obtained by using a…

Two-dimensional (2D) transition-metal monochalcogenides have been recently predicted to be potential photo(electro)catalysts for water splitting and photoelectrochemical (PEC) reactions. Differently from the most established InSe, GaSe,…

In this Perspective we summarize the status of technological development for large-area and low-noise substrate-transferred GaAs/AlGaAs (AlGaAs) crystalline coatings for interferometric gravitational-wave (GW) detectors. These topics were…

Sensitive ac susceptibility measurements of a topological insulator, Bi$_2$Se$_3$ single crystal, using mutual two coil inductance technique (Ref. 32) shows coupling and decoupling of high conducting surface states. The coupling of the…

We present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. The compositionally graded buffers in these devices have threading dislocation densities of 1.3x10^6 cm^-2 and…

A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. The ASIC features a matrix of hexagonal pixels with a 100 \mu m pitch, read by…