相关论文: AC-coupled GaAs microstrip detectors with a new ty…
A method to fabricate GaAs microcavities using only a soft mask with an electrolithographic pattern in an inductively coupled plasma etching is presented. A careful characterization of the fabrication process pinpointing the main routes for…
We investigated the suitability of AlN as a buffer layer for NbN superconducting nanowire single-photon detectors (SNSPDs) on GaAs. The NbN films with a thickness of 3.3 nm to 20 nm deposited onto GaAs substrates with AlN buffer layer,…
GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and…
We use neutron reflectometry to investigate the interlayer exchange coupling between Ga$_{0.97}$Mn$_{0.03}$As ferromagnetic semiconductor layers separated by non-magnetic Be-doped GaAs spacers. Polarized neutron reflectivity measured below…
We report the first observation of re-entrant layer-by-layer etching based on {\it in situ\/} reflection high-energy electron-diffraction measurements. With AsBr$_3$ used to etch GaAs(001), sustained specular-beam intensity oscillations are…
X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by…
To cope with environments with high levels of radiation, non-silicon semiconductors such as silicon carbide detectors are being proposed for instrumentation. 4H-SiC diodes for radiation detection have been fabricated in the IMB-CNM Clean…
Integrated heaters are a basic ingredient within the photonics toolbox, in particular for microresonator frequency tuning through the thermo-refractive effect. Resonators that are fully embedded in a solid cladding (typically…
Miniaturized, low-cost wavelength detectors are gaining enormous interest as we step into the new age of photonics. Incompatibility with integrated circuits or complex fabrication requirement in most of the conventionally used filters…
The Multigap Resistive Plate Chambers (MRPCs) are gas ionization detectors with multiple gas sub-gaps made of resistive electrodes. The high voltage (HV) is applied on the outer surfaces of outermost resistive plates only, while the…
We demonstrate humidity sensing using a change of electrical resistance of a single- layer chemical vapor deposited (CVD) graphene that is placed on top of a SiO2 layer on a Si wafer. To investigate the selectivity of the sensor towards the…
Gas detector are very light instrument used in high energy physics to measure the particle properties: position and momentum. Through high electric field is possible to use the Gas Electron Multiplier (GEM) technology to detect the charged…
The present understanding of the charge collection in GaAs detectors with respect to the materials used and its processing are discussed. The radiation induced degradation of the charge collection efficiency and the leakage current of the…
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…
Measurements of the temperature dependence of the surface resistance at 3 GHz of 100 micron size grains of MgB_2 separated powder are presented and discussed. The microwave surface resistance data is compared to experimental results of Nb,…
A 64-channel mixed-mode ASIC, suitable for particle detectors of large dynamic range and high capacitance up to hundreds of pF, is presented here. Each channel features an analogue front-end for signal amplification and filtering, and a…
GaAs disk resonators (typical disk size 5 \mum * 200 nm in our work) are good candidates for boosting optomechanical coupling thanks to their ability to confine both optical and mechanical energy in a sub-micron interaction volume. We…
It is the hybrid pixel detector technology which brought to the X-ray imaging a low noise level at a high spatial resolution, thanks to the single photon counting. However, silicon as the most widespread detector material is marginally…
The new beam profile measurement for the Antiproton Decelerator (AD) at CERN is based on a single Gas Electron Multiplier (GEM) with a 2D readout structure. This detector is very light, ~0.4% X0, as required by the low energy of the…
We report on the status and development of polarization-sensitive detectors for millimeter-wave applications. The detectors are fabricated on single-crystal silicon, which functions as a low-loss dielectric substrate for the microwave…