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相关论文: AC-coupled GaAs microstrip detectors with a new ty…

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We are developing large TES arrays in combination with FDM readout for the next generation of X-ray space observatories. For operation under AC-bias, the TESs have to be carefully designed and optimized. In particular, the use of high…

The wide-bandgap semiconductor 4H-silicon carbide (4H-SiC) offers a compelling combination of radiation hardness, thermal stability, and high critical electric field for particle detection in harsh environments. To compensate for the…

This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of…

仪器与探测器 · 物理学 2015-05-28 D. Bassignana , M. Fernandez , R. Jaramillo , M. Lozano , F. J. Munoz , G. Pellegrini , D. Quirion , I. Vila

High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an equivalent oxide thickness of 1.2nm. It is found that…

介观与纳米尺度物理 · 物理学 2015-06-15 Jiangjiang J. Gu , Xinwei Wang , Heng Wu , Roy G. Gordon , Peide D. Ye

3D silicon detectors are characterized by cylindrical electrodes perpendicular to the surface and penetrating into the bulk material in contrast to standard Si detectors with planar electrodes on its top and bottom. This geometry renders…

Controllable geometric manipulation via micromachining techniques provides a promising tool for enhancing useful topological electrical responses relevant to future applications such as quantum information science. Here we present…

材料科学 · 物理学 2019-10-29 Yangmu Li , Jie Wu , Fernando Camino , G. D. Gu , Ivan Božović , John M. Tranquada

In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon…

Driven by the growing demand for miniaturized spectrometers for in-situ analysis, and point-of-care diagnostics, conventional spectrometers are often constrained by bulky architectures and pathlength-limited spectral resolution. Achieving…

We present the results of an extensive evaluation of strip and pixel AC-LGAD sensors tested with a 120 GeV proton beam, focusing on the influence of design parameters on the sensor temporal and spatial resolutions. Results show that…

We demonstrate active embedded microfluidic cooling in $\beta$-Ga$_2$O$_3$. We employ a cost-effective infra-red laser etch setup to achieve controlled etching of micro-channels in 500 um thick $\beta$-Ga$_2$O$_3$ substrate. The…

This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p…

Ramp-type junctions of $\rm Au-Bi_2Se_3-NbN$ were prepared on top of a bottom gate comprised of a $\rm SrTiO_3$ gate-insulator film on $\rm NbN$ gate-electrode layer on (100) $\rm SrTiO_3$ wafer. Two wafers with gate-insulator thickness of…

超导电性 · 物理学 2018-08-22 Gad Koren

We measured the electronic properties and gas sensing response of nanowires containing segments of poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT/PSS) that were synthesized using anodic aluminum oxide (AAO) membranes. The…

材料科学 · 物理学 2009-03-07 Yaping Dan , Yanyan Cao , Tom E. Mallouk , Alan T. Johnson , Stephane Evoy

A biaxial tensile device for the transport study of layered materials is described. The device is mounted on the standard 24 pin zero force connector and can be moved between various setups. The compact design of the device makes it…

应用物理 · 物理学 2025-01-20 S. V. Zaitsev-Zotov

The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a…

Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode…

Portable and cost-effective gas sensors are gaining demand for a number of environmental, biomedical and industrial applications, yet current devices are confined into specialized labs and cannot be extended to general use. Here, we…

仪器与探测器 · 物理学 2020-04-10 Giuseppe Antonacci , Jeroen Goyvaerts , Haolan Zhao , Bettina Baumgartner , Bernhard Lendl , Roel Baets

We report on the development of a tunable antenna coupled intersubband terahertz (TACIT) detector based on GaAs/AlGaAs two dimensional electron gas. A successful device design and micro-fabrication process have been developed which maintain…

The electric transport properties of superconducting FeSe0.3Te0.7/Au c-axis (S/N) junctions, fabricated by using Pulsed Laser Deposition technique, have been investigated in the temperature range of 2 K to the superconducting transition…

超导电性 · 物理学 2015-06-15 Y. T. Shen , Y. S. Li , K. C. Lin , M. K. Wu , C. C. Chi