The wide-bandgap semiconductor 4H-silicon carbide (4H-SiC) offers a compelling combination of radiation hardness, thermal stability, and high critical electric field for particle detection in harsh environments. To compensate for the comparatively low charge generation in SiC, the Low-Gain Avalanche Detector (LGAD) concept can be adopted to provide internal signal amplification. Building on three preceding generations of single-pad 4H-SiC LGAD prototypes fabricated by ion implantation, this work presents the design, fabrication, and initial characterization of segmented 4H-SiC LGAD devices -- the first fabricated and characterized devices reported. Strip detectors with 80~μm pitch and pixel arrays with 55 and 110~μm pitch were produced using multiple inter-channel isolation strategies, including geometric separation and oxide-filled trenches. Two-photon absorption transient current technique (TPA-TCT) measurements performed at ELI ERIC demonstrate clear charge separation between adjacent strips with internal gain, confirming functional segmentation.
@article{arxiv.2605.17192,
title = {Development of Segmented 4H-SiC LGADs},
author = {Vojtěch Kráčmar and Jan Chochol and Adam Klimsza and Jana Kozáková and Adam Kozelsky and Jiří Kroll and Adela Kubránska and Mária Marčišovská and Marcela Mikeštíková and Radek Novotný and Aymeric Privat and Peter Slovák and Tobiáš Vasiljev and Peter Švihra},
journal= {arXiv preprint arXiv:2605.17192},
year = {2026}
}