Silicon carbide (SiC) is a promising material for radiation monitoring in harsh environments, due to its low dark current, high breakdown voltage, high thermal conductivity, and radiation hardness.~This work investigates a SiC-based Low-Gain Avalanche Detector (LGAD), named SICAR, with a gain factor of~2 to 3, under 80 MeV proton irradiation up to 1×1014~neq/cm2. Electrical characterization via I-V, C-V, and α particle injection reveals an increase in threshold voltage and a 2 to 4 order of magnitude reduction in leakage current, while charge collection efficiency decreases by about 50\%. X-ray diffraction (XRD) and capacitance deep-level transient spectroscopy (C-DLTS) were employed to characterize the lattice structure and deep-level defects before and after irradiation. Deep-level defect characteristics were integrated into TCAD simulations to develop an electrical degradation model for SiC LGADs. A linear defect-flux relationship is established in the model, showing agreement with experimental results.
@article{arxiv.2507.12238,
title = {The study of 4H-SiC LGAD after proton radiation},
author = {Sen Zhao and Jiaqi Zhou and Chenxi Fu and Congcong Wang and Suyu Xiao and Xinbo Zou and Haolan Qv and Jiaxiang Chen and Xiyuan Zhang and Xin Shi},
journal= {arXiv preprint arXiv:2507.12238},
year = {2025}
}