相关论文: AC-coupled GaAs microstrip detectors with a new ty…
Sensors fabricated from high resistivity, float zone, silicon material have been the basis of vertex detectors and trackers for the last 30 years. The areas of these devices have increased from a few square cm to $\> 200\ m^2$ for the…
A radio-frequency (rf) matching circuit with an in situ tunable varactor diode used for rf reflectometry measurements in semiconductor nanostructures is investigated and used to optimize the sample-specific chip design. The samples are…
Nano-membrane tri-gate beta-gallium oxide (\b{eta}-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized…
A novel approach for designing the next generation of vertex detectors foresees to employ wafer-scale sensors that can be bent to truly cylindrical geometries after thinning them to thicknesses of 20-40$\mu$m. To solidify this concept, the…
We report a study of the temperature dependence of the surface resistance RS in the graphite intercalated compound (GIC) CaC6, where superconductivity at 11.5 K was recently discovered. Experiments are carried out using a copper…
Multiwire and microstrip porous detectors have been developed and investigated for DC operation. The multiwire porous detector consists of anode wires, an Al cathode and a gap between them filled with porous CsI. The microstrip porous…
New Micromegas (Micro-mesh gaseous detectors) are being developed in view of the future physics projects planned by the COMPASS collaboration at CERN. Several major upgrades compared to present detectors are being studied: detectors…
The new beam profile measurement for the Antiproton Decelerator (AD) at CERN is based on a single Gas Electron Multiplier (GEM) with a 2D readout structure. This detector is very light, ~0.4% X_0, as required by the low energy of the…
In the context of the ATHENA X-IFU Cryogenic AntiCoincidence Detector (CryoAC) development, we have studied the thermalization properties of a 2mm x 2mm SQUID chip. The chip is glued on a front-end PCB and operated on the cold stage of a…
The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gained its wide application in charged particle detection. In this paper, the manufacturing procedure,…
We report on the optimization of discharge insensitive floating strip Micromegas (MICRO-MEsh GASeous) detectors, fit for use in high-energy muon spectrometers. The suitability of these detectors for particle tracking is shown in…
The architecture of the novel MPGD-based photon detectors of COMPASS RICH-1 consists in a large-size hybrid MPGD multilayer layout combining two layers of Thick-GEMs and a bulk resistive MICROMEGAS. Concerning biasing voltage, the…
A silicon microstrip detector (SSD) has been developed to have state of the art spatial resolution and a large sensitive area under stringent power constraints. The design incorporates three floating strips with their bias resistors…
The optimization of resistive anode for two dimensional imaging detectors which consists of a series of high resistive square pads surrounding by low resistive strips has been studied by both numerical simulations and experimental tests. It…
III V semiconductor nanowire based photodetectors have significant potential for remote sensing and LiDAR applications, particularly due to their ability to operate at 1.55 {\mu}m. Achieving room temperature operation and near unity…
In this study, we evaluate the suitability of using DC-biased aluminium resonators as low-frequency kinetic inductance detectors operating in the frequency range of 50 - 120 GHz. Our analysis routine for supercurrent-biased resonators is…
Micro-Pattern Gaseous Detectors (MPGDs) with resistive anode planes provide intrinsic discharge robustness while maintaining good spatial and time resolutions. Typically read out with 1D strips or pad structures, here the characterisation…
Ag-sheathed CaKFe4As4 superconducting tapes have been fabricated via the ex-situ powder-in-tube method. Thermal and X-ray diffraction analyses suggest that the CaKFe4As4 phase is unstable at high temperatures. It decomposes into the CaAgAs…
A Si(Li) detector fabrication procedure has been developed with the aim of satisfying the unique requirements of the GAPS (General Antiparticle Spectrometer) experiment. Si(Li) detectors are particularly well-suited to the GAPS detection…
GaAs Schottky diode detectors have been fabricated upon Low Pressure Vapour Phase Epitaxial GaAs. The devices were characterised before and after a $1.25 \times 10^{14}$~cm$^{-2}$ 24GeV/c proton fluence. The as fabricated Ti-GaAs barrier…