相关论文: AC-coupled GaAs microstrip detectors with a new ty…

In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$\beta$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer…

We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant and a coupling dielectric layer have been…

GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $\mu\textrm{m}$ - 130…

Future high-energy physics experiments require a paradigm shift in radiation detector design. In response to this challenge, resistive LGADs that combine Low Gain Avalanche Diode technology with resistive readout have been developed. The…

We have developed microstrip gas counters manufactured on standard printed circuit board and having the following features: resistive cathode strips, thin (10 micron) metallic anode strips and electrodes protected against surface discharges…

A one-coordinate gaseous detector of soft X-ray photons for wide-angle X-ray scattering (WAXS) studies is being developed. The detector operates in counting mode and is based on multi-stage Gas Electron Multiplier(GEM). Full size detector…

This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a single growth process has been found to significantly improve…

The aim of the presented work is the development of single-stage amplification resistive Micro Pattern Gas Detectors (MPGD) based on Micromegas technology with the following characteristics: ability to efficiently operate up to 10…

A new family of spark-protected micropattern gaseous detectors is introduced: a 2-D sensitive restive microstrip counter and hybrid detectors, which combine in one design a resistive GEM with a microstrip detector. These novel detectors…

For modern Gas sensors, high sensitivity and low power are expected. This paper discusses design, simulation and fabrication of new Micromachined Thermal Converters (MTCs) based on GaAs developed for Gas sensors. Metal oxide gas sensors…

A two-dimensional position-sensitive microchannel plate detector, with a {\O}100 mm sensitive area and equipped with four integrated amplifiers, is realized with a new anode scheme. The anode is constructed by two independent…

We have developed a new design of a GEM-like detector with single-layer electrodes made of a resistive kapton. This detector can operate at gains close to 10E5 even in pure Ar and Ne and if transited to discharges at higher gains they, due…

We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…

In the last few years our group have focused on developing various designs of spark-protected micropattern gaseous detectors featuring resistive electrodes instead of the traditional metallic ones: resistive microstrip counters, resistive…

The construction of a micro-pattern gas detector of dimensions 40x10 cm**2 is described. Two gas electron multiplier foils (GEM) provide the internal amplification stages. A two-layer readout structure was used, manufactured in the same…

We present an original design for large area gaseous detectors based on the MICROMEGAS technology. This technology incorporates an insulating grid, sandwiched between the micro-mesh and the anode-pad plane, which provides an uniform 200…

We developed a capacitor type heat flow switching device, in which electron thermal conductivity of the electrodes is actively controlled through the carrier concentration varied by an applied bias voltage. The devices consist of an…

We present the electro-thermal characterization of transition-edge sensor (TES) detectors suspended on Si membranes fabricated using a silicon-on-insulator (SOI) wafer. The use of an all-silicon fabrication platform, in contrast to the more…

A gallium arsenide detector was tested with a beam of 70GeV pions at the {\sf SPS} at CERN. The detector utilises a novel biasing scheme which has been shown to behave as expected. The detector has a pitch of 50$\mu$m and therefore an…

beta-Ga2O3 is a wide bandgap semiconductor with electrical properties better than SiC and GaN which makes it promising for applications of next-generation power devices. However, the thermal conductivity of \b{eta}-Ga2O3 is more than one…