相关论文: Evolution of magnetic and microstructural properti…
5$\mu$m thick NdFeB films have been sputtered onto 100 mm Si substrates using high rate sputtering (18 $\mu$m/h). Films were deposited at ≤ 500 C and then annealed at 750 C for 10 minutes. While films deposited at temperatures up to…
The copper ferrite thin films have been deposited by RF sputtering at a 50W rf power. The As-deposited films are annealed in air at $800^{\circ}$C and then slow cooled. The As-deposited (AD) as well as slow cooled (SC) films are studied…
Nb3Sn films were fabricated by multilayer sequential sputtering on Nb at substrate temperatures ranging from room temperature to 250 {\deg}C. The multilayers were then annealed inside a separate vacuum furnace at 950 {\deg}C for 3h. The…
5$\mu$m thick SmCo films were deposited onto Si substrates using triode sputtering. A study of the influence of deposition temperature (Tdep <= 600 degrees C) on the structural, magnetic and mechanical properties has shown that optimum…
MgB2 thin films were deposited using Pulsed Laser Deposition (PLD) and ex-situ annealing in Mg atmosphere. The films presented critical temperatures up to 36K and turned out to be preferentially c-oriented both on Al2O3 (r-cut) and MgO(100)…
10 nm and 50 nm Co$_{2}$FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according…
MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of B-Mg bilayer followed by in-situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 C.…
Pb-free ferroelectric thin films are gaining attention due to their applicability in memory, sensor, actuator, and microelectromechanical system. In this work, Na$_{0.4}$K$_{0.1}$Bi$_{0.5}$TiO$_3$ (NKBT0.1) ferroelectric thin films were…
Ferroelectricity in sputtered undoped-HfO$_2$ is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO$_2$, evolution of ferroelectricity with annealing and film thickness effect…
We report magnetostatic measurements for granulated films (CoFeB)$_{x}$-(SiO$_{2}$)$_{1-x}$ with fabrication induced intraplanar anisotropy. The measurements have been performed in the film plane in the wide temperature interval…
The in situ annealing conditions of pulsed laser deposited MgB2 films were studied. The precursor films were deposited at 250 C from a stoichiometric MgB2 target in a 120mTorr Ar atmosphere. The films were then in situ annealed at a…
Nb3Sn and V3Si thin films are promising candidates as thin films for the next generation of superconducting radio-frequency (SRF) cavities. However, sputtered films often suffer from stoichiometry and strain issues during deposition and…
Copper ferrite thin films were deposited on amorphous quartz substrates. The as deposited films were annealed in air and either quenched or slow cooled. Magnetization studies were carried out on the as deposited as well as annealed films…
The effect of vacuum annealing thin films of the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 to 400 degree Celsius is investigated. The 39.3 nm films deposited on (100) MgO substrates exhibit perpendicular…
Controlling the interface between W and CoFeB-based buffer or capping layers at an appropriate temperature is essential for modifying the strength of magnetic anisotropy. In this work, we systematically explore the impact of W buffer and…
The magnetization (M) as a function of temperature (T) from 2 to 300 K and in-plane field (H) up to 1 kOe, room temperature easy and hard direction in-plane field hysteresis loops for fields between -100 and +100 Oe, and 10 GHz…
Thin films of the Single Molecule Magnet (Mn12-acetate) have been fabricated on a Si-substrate by the Dip-and-Dry method, a simple and robust technique. Atomic force microscopy and X-ray photoelectron spectroscopy characterizations reveal…
50nm thick nanogranular polycrystalline dysprosium thin films have been prepared via ultra-high vacuum DC sputtering on SiO2 and Si wafers. The maximum in-plane spontaneous magnetization at T = 4K was found to be MS4K = 3.28T for samples…
Al-doped ZnO thin films were deposited using reactive high power impulse magnetron sputtering at substrate temperatures between room temperature and 600 $\bullet$ C. Two sample series with different oxygen partial pressures were studied.…
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on the chemical properties of crystalline Ta$_2$O$_5$ films grown on Si(100) substrates by radio frequency magnetron sputtering. The atomic…